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BTC752A3

BTC752A3

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    BTC752A3 - High Frequency NPN Switching Transistor - Cystech Electonics Corp.

  • 详情介绍
  • 数据手册
  • 价格&库存
BTC752A3 数据手册
CYStech Electronics Corp. High Frequency NPN Switching Transistor Spec. No. : C229A3-T Issued Date : 2004.08.06 Revised Date : Page No. : 1/3 BTC752A3 Description • High transition frequency, fT=400MHz(typ) • High current, IC(max)=200mA • Low saturation voltage, VCE(SAT)=0.3V(max) Symbol BTC752A3 Outline TO-92 B:Base C:Collector E:Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd RthJA Tj Tstg Limits 40 15 4.5 200 40 400 250 125 -55~+125 Unit V V V mA mA mW °C/W °C °C BTC752A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE1 *hFE2 fT Cob Min. 40 15 4.5 700 40 20 200 Typ. 400 4 Max. 100 100 250 300 850 1 120 6 Unit V V V nA nA mV mV mV V MHz pF Spec. No. : C229A3-T Issued Date : 2004.08.06 Revised Date : Page No. : 2/3 Test Conditions IC=50µA IC=1mA IE=50µA VCB=40V VEB=4.5V IC=10mA, IB=1mA IC=20mA, IB=1mA IC=10mA, IB=1mA IC=20mA, IB=1mA VCE=1V, IC=10mA VCE=2V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTC752A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C229A3-T Issued Date : 2004.08.06 Revised Date : Page No. : 3/3 A B 1 2 3 α2 Marking: α3 C752 C D H I E F G α1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC752A3 CYStek Product Specification
BTC752A3
物料型号: - 型号:BTC752A3 - 规格编号:C229A3-T - 发布日期:2004.08.06

器件简介: - BTC752A3是一款高频NPN开关晶体管,具有400MHz的高转换频率、最大200mA的高电流和最大0.3V的低饱和电压。

引脚分配: - 引脚1:发射极(Emitter) - 引脚2:集电极(Collector) - 引脚3:基极(Base)

参数特性: - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):40V - 集电极-发射极电压(VCEO):15V - 发射极-基极电压(VEBO):4.5V - 集电极电流(Ic):200mA - 基极电流(IB):40mA - 功率耗散(Pd):400mW - 热阻,结到环境(RthJA):250°C/W - 结温(Tj):125℃ - 存储温度(Tstg):-55~+125℃

功能详解: - 特性(Ta=25°C): - 集电极-基极击穿电压(BVCBO):40V - 集电极-发射极击穿电压(BVCEO):15V - 发射极-基极击穿电压(BVEBO):4.5V - 集电极反向漏电流(ICBO):100nA(VCB=40V) - 发射极反向漏电流(IEBO):100nA(VEB=4.5V) - 饱和压降(VCE(sat)):250mV(Ic=10mA, IB=1mA)和300mV(Ic=20mA, IB=1mA) - 饱和基极-发射极电压(VBE(sat)):700mV(Ic=10mA, IB=1mA)和1V(Ic=20mA, IB=1mA) - 电流增益(hFE):40(VCE=1V, Ic=10mA)和20(VCE=2V, Ic=100mA) - 转换频率(fr):400MHz(VCE=10V, Ic=10mA, f=100MHz) - 电容(Cob):4pF(VCB=10V, f=1MHz)

应用信息: - 该晶体管适用于高频开关应用。

封装信息: - 封装类型:3引脚TO-92塑料封装 - 封装代码:A3 - 材料: - 引线:42合金;焊料镀层 - 模塑化合物:环氧树脂家族,UL94V-0可燃性固体燃烧等级
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