BTD1768N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 1/4 BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) Symbol BTD1768N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limits 100 80 5 1 2 (Note) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min. 100 80 5 120 Typ. 0.15 100 20 Max. 1 1 0.4 560 Unit V V V µA µA V MHz pF Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 2/4 Test Conditions IC=50µA IC=1mA IE=50µA VCB=80V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=3V Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE VBESAT@IC=20IB 100 HFE@VCE=2V 100 VCESAT@IC=20IB 10 1 10 100 1000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) On Voltage vs Collector Current 1000 Power Dissipation---PD(mW) 250 200 150 100 50 0 Power Derating Curve On Voltage---(mV) VBE(on)@VCE=2V 100 1 10 100 1000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTD1768N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension A L 3 B 1 2 S Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date : Page No. : 4/4 Marking: AJ V G C D K 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1768N3 CYStek Product Specification