BTD1864AI3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4 BTD1864AI3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1243AI3 Symbol BTD1864AI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 40 30 5 3 7 1 15 150 -55~+150 Unit V V V *1 A W °C °C BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 30 5 52 82 82 Typ. 0.25 90 45 Max. 1 1 0.5 2 560 Unit V V V µA µA V V MHz pF Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V. IE=0 VEB=4V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=0.1A VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE2 Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=2V Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCESAT@IC=20IB Current Gain---HFE 100 10 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Power Dissipation---PD(W) Saturation Voltage---(mV) Power Derating Curve 16 14 12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC(℃) VBESAT@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTD1864AI3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 4/4 Marking: D1864A F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1864AI3 CYStek Product Specification