BTD2061FP

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 1/4 BTD2061FP Features • Low saturation voltage, typically VCE(sat)=0.2V at IC/IB=2A/0.2A. • Excellent DC current gain characteristics. • Wide SOA(safe operating area). • Pb-free package. Symbol BTD2061FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTD2061FP CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 60 5 3 6 (Note 1) 2 30 62.5 4.167 150 -55~+150 Unit V V V A W °C/W °C/W °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. 80 60 5 100 Typ. 0.3 8 70 Max. 10 10 1 1.5 320 Unit V V V µA µA V V MHz pF Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IB=0 VCE=60V, IB=0 VEB=4V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=500mA VCE=5V, IC=500mA, f=5MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range E 100~200 F 160~320 BTD2061FP CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 10000 Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VCE=5V 1000 VCESAT@IC=40IB VCESAT@IC=20IB 100 100 VCE=2V VCESAT@IC=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Power Derating Curve 3 Power Dissipation---PD(W) 3 2 2 1 1 0 VBESAT@IC=10IB 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve 40 Power Dissipation---PD(W) 30 20 10 0 0 50 100 150 200 Case Temperature---TC(℃) BTD2061FP CYStek Product Specification CYStech Electronics Corp. TO-220FP Dimension Marking: Spec. No. : C608FP Issued Date : 2005.09.07 Revised Date : Page No. : 4/4 D2061 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical DIM A A1 A2 A3 b b1 b2 c Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2061FP CYStek Product Specification