BTD2097AI3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4 BTD2097AI3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics • Complementary to BTB1412AI3 Symbol BTD2097AI3 Outline TO-251 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd@ TA=25℃ Pd@ TC=25℃ Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W °C °C Note : *1. Single Pulse , Pw≦380µs,Duty≦2%. *2. When mounted on a 40*40*0.7mm ceramic board. BTD2097AI3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 50 20 6 120 Typ. 0.35 150 35 Max. 0.5 0.5 1 820 Unit V V V µA µA V MHz pF Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 T 390~820 BTD2097AI3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves C urrent Gain vs Collector Current 1000 HFE@VCE=2V Saturation Voltage-(mV) Current Gain---HFE 100 1000 Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCESAT@IC=20IB 10 100 1 10 100 1000 10000 Collector Current--- IC(mA) 1 0.1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Saturation Voltage-(mV) VCE(SAT)@IB=40IB Saturation Voltage-(mV) 100 10000 Saturation Voltage vs Collector Current VBE(SAT)@IC=20IB 1000 10 1 1 10 100 1000 10000 Collector Current---IC(mA) 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 1.2 Power Dissipation---PD(W) Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTD2097AI3 Power Derating Curve 12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC(℃) CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 4/4 A B C D Marking: D2097 F 3 E K 2 1 G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2097AI3 CYStek Product Specification