BTD2098N3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 1/4 BTD2098N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol BTD2098N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits 40 20 7 5 8 (Note ) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTD2098N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 20 7 230 150 Typ. 0.35 150 Max. 0.1 1 0.1 1.0 800 50 Unit V V µA µA µA V MHz pF Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 2/4 Test Conditions IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VCB=10V, IE=0 VEB=7V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2.00A VCE=6V, IE=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range Q 230~380 R 340~600 S 400~800 BTD2098N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves C urrent Gain vs Collector Current 1000 1000 Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=30IB Saturation Voltage-(mV) HFE@VCE=2V 100 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE 100 C utoff Frequency vs Collector Current 1000 CutoffF Frequency---FT(MHZ) Power Dissipation---PD(mW) FT@VCE=6V 250 200 150 100 50 0 1 10 Collector Current---IC(mA) 100 0 Power Derating Curve 100 50 100 150 200 Ambient Temperature---TA(℃) BTD2098N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2004.07.01 Page No. : 4/4 A L 3 B 1 2 S Marking: TE AH V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2098N3 CYStek Product Specification