BTD2150A3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 BTD2150A3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA • Excellent current gain characteristics • Complementary to BTB1424A3 • Pb-free package Symbol BTD2150A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg Limit 80 50 6 3 7 (Note) 750 150 -55~+150 Unit V V V A A mW °C °C BTD2150A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 80 50 6 180 180 150 Typ. 0.1 0.25 90 45 Max. 100 100 0.25 0.5 1.5 820 Unit V V V nA nA V V V MHz pF Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 2/5 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range R 180~290 S 270~560 T 390~820 Characteristic Curves Grounded Emitter Output Characteristics 140 Collector Current---IC(mA) Grounded Emitter Output Characteristics 700 2.5mA 2mA 1.5mA 1mA 500uA IB=0uA 100 80 60 40 20 0 0 1 2 3 4 400uA 300uA 200uA 100uA IB=0uA Collector Current---IC(mA) 120 500uA 600 500 400 300 200 100 0 5 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Collector To Emitter Voltage---VCE(V) BTD2150A3 CYStek Product Specification CYStech Electronics Corp. Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 3/5 Grounded Emitter Output Characteristics 3500 10mA 8mA 25mA 20mA 15mA 10mA 2000 1500 1000 500 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) 3000 2500 2000 1500 1000 500 0 6mA 4mA 2mA IB=0mA 5mA IB=0mA 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current gain vs Collector current 1000 VCE=5V Saturation voltage vs Collector current 1000 VCE(sat) Saturation voltage---(mV) Current gain---HFE 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 Collector current---IC(mA) 10000 1 1 10 100 1000 Collector current---IC(mA) 10000 Saturation votlage vs Collector current 10000 Power Derating Curve 800 Power Dissipation---PD(mW) VBE(sat)@IC=10IB 700 600 500 400 300 200 100 0 0 50 100 150 200 Saturation voltage---(mV) 1000 100 1 10 100 1000 10000 Collector current---IC(mA) Ambient Temperature --- Ta(℃ ) BTD2150A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Taping Outline H2 H2 H2A H2A A D2 Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 4/5 H3 L H4 H L1 H1 F1 F2 D1 D W1 W T2 T T1 P1 P P2 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 BTD2150A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension α2 Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 5/5 A B 1 2 3 Marking: D2150 α3 C D H I E F G α1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150A3 CYStek Product Specification