BTD2150N3

CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4 BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics • Complementary to BTB1424N3 Symbol BTD2150N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limit 60 60 6 4 7 (Note 1) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTD2150N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 60 60 6 120 120 100 Typ. 0.25 90 45 Max. 100 100 0.3 0.5 1.5 820 Unit V V V nA nA V V V MHz pF Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 2/4 Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=400mA, IB=20mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range Q 120~270 R 180~390 S 270~560 T 390~820 BTD2150N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=5V Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 3/4 Saturation voltage vs Collector current 1000 VCE(sat) Saturation voltage---(mV) Current gain---HFE 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 Collector current---IC(mA) 10000 1 1 10 100 1000 Collector current---IC(mA) 10000 Saturation votlage vs Collector current 10000 Power Dissipation---PD(mW) VBE(sat)@IC=10IB Power Derating Curve 250 200 150 100 50 0 Saturation voltage---(mV) 1000 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTD2150N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 4/4 A L 3 B 1 2 S Marking: TE CF V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150N3 CYStek Product Specification