BTD882D3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package Symbol BTD882D3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 50 50 5 3 7 (Note) 1 10 150 -55~+150 Unit V V V A W °C °C BTD882D3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 150 180 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 820 Unit V V V µA µA V V MHz pF Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f =100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range R 180~390 S 270~560 T 390~820 Characteristic Curves Grounded Emitter Output Characteristics 140 Collector Current---IC(mA) Grounded Emitter Output Characteristics 700 2.5mA 2mA 1.5mA 1mA 500uA IB=0uA 100 80 60 40 20 0 0 1 2 3 4 400uA 300uA 200uA 100uA IB=0uA Collector Current---IC(mA) 120 500uA 600 500 400 300 200 100 0 5 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Collector To Emitter Voltage---VCE(V) BTD882D3 CYStek Product Specification CYStech Electronics Corp. Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 3/4 Grounded Emitter Output Characteristics 3500 10mA 8mA 25mA 20mA 15mA 10mA 2000 1500 1000 500 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) Collector Current---IC(mA) 3000 2500 2000 1500 1000 500 0 6mA 4mA 2mA IB=0mA 5mA IB=0mA 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current gain vs Collector current 1000 Saturation voltage---(mV) Saturation voltage vs Collector current 1000 VCE(sat) Current gain---HFE VCE=5V 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 10000 Collector current---IC(mA) 1 1 10 100 1000 10000 Collector current---IC(mA) Saturation votlage vs Collector current 10000 Saturation voltage---(mV) VBE(sat)@IC=10IB Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 1000 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTD882D3 CYStek Product Specification CYStech Electronics Corp. TO-126ML Dimension Marking: Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 4/4 D882 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical DIM A B C D Φ1 Φ2 F G Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 3.10 3.30 3.00 3.20 1.87 2.12 0.74 1.25 DIM H I J K L M N O Inches Min. Max. 0.0462 0.0562 *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. 1.17 1.42 *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882D3 CYStek Product Specification