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BTD882J3

BTD882J3

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    BTD882J3 - Low Vcesat NPN Epitaxial Planar Transistor - Cystech Electonics Corp.

  • 数据手册
  • 价格&库存
BTD882J3 数据手册
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 BTD882J3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772J3 • RoHS compliant package BVCEO IC RCESAT 30V 3A 125mΩ typ. Symbol BTD882J3 Outline TO-252 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350us,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 40 30 5 3 7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 BTD882J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 150 180 Typ. 0.25 90 45 Max. 1 1 0.5 2 560 Unit V V V μA μA V V MHz pF Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 2/7 Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range P 180~390 E 270~560 Ordering Information Device BTD882J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs/Tape & Reel Marking D882 BTD882J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Emitter Grounded Output Characteristics 0.25 IB=500uA Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 3/7 Emitter Grounded Output Characteristics 1 Collector Current---IC(A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IB=0 IB=2.5mA IB=2mA IB=1.5mA IB=1mA IB=500uA Collector Current---IC(A) 0.2 IB=400uA 0.15 0.1 0.05 0 0 IB=300uA IB=200uA IB=100uA IB=0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Emitter Grounded Output Characteristics 3 IB=10mA Emitter Grounded Output Characteristics 4.5 4 Collector Current---IC(A) 3.5 3 2.5 2 1.5 1 0.5 0 6 0 IB=0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA Collector Current---IC(A) 2.5 2 1.5 IB=8mA IB=6mA IB=4mA IB=2mA 1 0.5 IB=0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 1000 VCE=5V Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE(SAT) Current Gain---HFE 1000 IC=100IB IC=50IB 100 VCE=2V VCE=1V 100 IC=20IB 10 1 10 100 1000 Collector Current---IC(mA) 10000 10 1 10 100 1000 Collector Current---IC(mA) 10000 BTD882J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT)@IC=10IB Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 4/7 Capacitance vs Reverse-Biased Voltage 1000 Capacitance---(pF) Cib 100 1000 Cob 100 1 10 100 1000 Collector Current---IC(mA) 10000 10 0.1 1 10 Reverse-Biased Voltage---(V) 100 Power Derating Curve 1.2 Power Dissipation---PD(W) 12 10 8 6 4 2 0 Power Derating Curve Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 0 25 50 75 100 125 150 Case Temperature---TC(℃) 175 200 BTD882J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 5/7 Carrier Tape Dimension BTD882J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD882J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 7/7 Marking: B L F G D Device Name HFE rank code D882 □ □□ Date Code 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882J3 CYStek Product Specification
BTD882J3 价格&库存

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