BTD882SA3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 BTD882SA3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772SA3 Symbol BTD882SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg Limit 60 50 5 3 (Note) 7 750 150 -55~+150 Unit V V V A A mW °C °C BTD882SA3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V µA µA V V MHz pF Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V. IE=0 VEB=3V,IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range Q 100~200 P 160~320 E 250~500 BTD882SA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=5V Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 3/4 Saturation voltage vs Collector current 1000 VCE(sat) Saturation voltage---(mV) Current gain---HFE 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 Collector current---IC(mA) 10000 1 1 10 100 1000 Collector current---IC(mA) 10000 Saturation votlage vs Collector current 10000 Power Dissipation---PD(mW) VBE(sat)@IC=10IB Power Derating Curve 800 700 600 500 400 300 200 100 0 0 50 100 150 200 Saturation voltage---(mV) 1000 100 1 10 100 1000 10000 Collector current---IC(mA) Ambient Temperature --- Ta(℃ ) BTD882SA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension α2 Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 4/4 A B 1 2 3 Marking: D882S α3 C D H I E F G α1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882SA3 CYStek Product Specification