BTD882T3S

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3/S • Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 40 30 5 3 7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V µA µA V V MHz pF Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range Q 100~200 P 160~320 E 250~500 Ordering Information Device BTB882T3 BTB882T3S Package TO-126 TO-126 (Pb-free) Shipping 500 pcs / bag 500 pcs / bag BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 VCE=5V Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 3/4 C-E saturation voltage vs Collector current 1000 C-E saturation voltage--VCE(SAT)(mV) Current gain---HFE 100 IC=40IB 100 VCE=2V VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector current---IC(mA) Collector current---IC(mA) Power derating curves B-E saturation votlage vs Collector current 10000 12 Power Dissipation---(W) 10 8 6 4 2 0 1 10 100 1000 10000 Ta=25℃ Tc=25℃ B-E saturation voltage--VBE(SAT)(mV) IC=10IB 1000 100 0 50 100 150 200 Collector current---IC(mA) Temperature---(℃) BTD882T3/S CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 4/4 E J K M Marking: α3 α4 D882 Style: Pin 1.Emitter 2.Collector 3.Base F H L α1 α2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM α1 α2 α3 α4 A B C D E Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882T3/S CYStek Product Specification