BTD965A3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 1/4 BTD965A3 Features • Low VCE(sat), Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 Equivalent Circuit BTD965A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC(cp) Pd Tj Tstg Limits 40 20 7 5 8 *1 0.75 150 -55~+150 Unit V V V A(DC) A(Pulse) W °C °C Note : *1. Single Pulse Pw≦380us,Duty≦2%. BTD965A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 20 7 230 150 Typ. 0.35 150 Max. 0.1 1 0.1 1.0 800 50 Unit V V uA uA uA V MHz pF Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 2/4 Test Conditions IC=1mA, IB=0 IE=10uA, IC=0 VCB=10V. IE=0 VCB=10V. IE=0 VEB=7V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2.00A VCE=6V, IE=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range Q 230~380 R 340~600 S 400~800 BTD965A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves C urrent Gain vs Collector Current 1000 1000 Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=30IB Saturation Voltage-(mV) HFE@VCE=2V 100 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) C utoff Frequency vs Collector Current Current Gain---HFE 100 Power Derating Curve 1000 CutoffF Frequency---FT(MHZ) Power Dissipation---PD(mW) 100 FT@VCE=6V 800 700 600 500 400 300 200 100 0 1 10 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) 100 BTD965A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 4/4 A B 1 2 3 α2 Marking: 965 α3 C D H I E F G α1 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD965A3 CYStek Product Specification