BTN1053M3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2004.04.12 Page No. : 1/5 BTN1053M3 Features • 2W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). • 5A peak pulse current SOT-89 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation@Ta=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 150 75 5 1.5 5 1 (Note 2) 2 (Note 3) 150 -55~+150 Unit V V V A W °C °C Note 1: Single pulse, Pw≤300µs, Duty Cycle≤2%. 2: When the device is mounted on a FR-4 PCB measuring 15 × 15 × 0.6mm. 3: When the device is mounted on a ceramic substrate measuring 40 × 40 × 0.6mm. BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO ICES IEBO VCE(sat) 1 * VCE(sat) 2 * VCE(sat) 3 * VCE(sat) 4 * VBE(sat) * VBE(on) * hFE 1 * hFE 2 * hFE 3 * hFE 4 * fT Cob Min. 150 150 75 5 270 300 120 10 Typ. 300 300 100 7.7 0.9 0.9 0.6 1.1 1.1 600 180140 20 Max. 10 10 10 40 200 1.2 500 1.2 1.2 1200 Unit V V V V nA nA nA mV mV V mV V V MHz pF Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2004.04.12 Page No. : 2/5 Test Conditions IC=100µA IC=100µA IC=10mA IE=100µA VCB=120V VCE=120V VEB=4V IC=200mA, IB=20mA IC=500mA, IB=20mA IC=1A, IB=10mA IC=2A, IB=100mA IC=3A, IB=100mA VCE=2V, IC=3A VCE=2V, IC=10mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=4.5A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Grounded Emitter Output Characteristics 1800 Collector Current---IC(mA) 1600 1400 1200 1000 800 600 400 200 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 6 IB=0mA 2mA 10mA 8mA 6mA 4mA Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2004.04.12 Page No. : 3/5 Grounded Emitter Output Characteristics 2500 25mA Collector Current---IC(mA) 2000 1500 1000 500 20mA 15mA 10mA 5mA IB=0mA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Grounded Emitter Output Characteristics 250 Collector Current---IC(mA) 500uA Grounded Emitter Output Characteristics 1200 2.5mA 200 150 100 50 0 0 1 2 3 4 400uA 300uA 200uA 100uA IB=0uA Collector Current---IC(mA) 1000 800 600 400 200 IB=0uA 2mA 1.5mA 1mA 500uA 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 5 Collector To Emitter Voltage---VCE(V) Current Gain vs Collector Current 1000 VCE=1V 1000 Current Gain vs Collector Current VCE=2V Current Gain---HFE Current Gain---HFE 100 100 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Current Gain vs Collector Current 1000 VCE=5V Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2004.04.12 Page No. : 4/5 Saturation Voltage vs Collector Current 1000 Saturation Voltage-(mV) VCE(SAT)@IC=10IB Current Gain---HFE 100 100 10 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 1000 Saturation Voltage-(mV) VCE(SAT)@IC=20IB Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VBE(SAT)@IC=10IB 100 1000 10 1 1 10 100 1000 Collector Current---IC(mA) 10000 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA(℃) 200 (Note 2 on page 1) BTN1053M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension Marking: A Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2004.04.12 Page No. : 5/5 1 2 C 3 H 78L05 CB B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN1053M3 CYStek Product Specification