BTN3501F3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 1/6 BTN3501F3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package Features Symbol BTN3501F3 Outline TO-263 C B E B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 60 62.5 2.08 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTN3501F3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 Unit V µA µA V V MHz pF Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 2/6 Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTN3501F3 Package TO-263 (Pb-free) Shipping 800 pcs / Tape & Reel Marking N3501 Characteristic Curves Grounded Emitter Output Characteristics 2500 Collector Current---IC(mA) Collector Current---IC(mA) 5000 10mA 8mA 4500 4000 3500 3000 2500 2000 1500 1000 500 0 15mA 10mA 5mA IB=0mA 0 1 2 3 4 5 6 25mA 20mA Grounded Emitter Output Characteristics 2000 1500 1000 500 0 0 6mA 4mA 2mA IB=0mA 2 4 Collector To Emitter Voltage---VCE(V) 6 Collector To Emitter Voltage---VCE(V) BTN3501F3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Grounded Emitter Output Characteristics 140 Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 3/6 Grounded Emitter Output Characteristics 700 2.5mA Collector Current---IC(mA) 100 80 60 40 20 0 0 1 2 3 4 400uA 300uA 200uA 100uA IB=0uA 5 6 Collector Current---IC(mA) 120 500uA 600 500 400 300 200 100 IB=0uA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2mA 1.5mA 1mA 500uA Collector To Emitter Voltage---VCE(V) Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE = 5V Saturation Voltage vs Collector Current 10000 VCE(SAT) 1000 IC = 20IB IC = 50IB Current Gain---H FE 100 VCE = 2V VCE = 1V 100 IC = 10IB 10 1 10 100 1000 10000 Collector Current---I C (mA) 10 1 10 100 1000 10000 Collector Current---I C (mA) Saturation Voltage vs Collector Current 10000 Power Dissipation---P D(W) Saturation Voltage---(mV) VCE(SAT) @ IC = 10IB Power Derating Curve 2.5 2 1.5 1 0.5 0 1000 100 1 10 100 1000 10000 Collector Current---I C (mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTN3501F3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Power Derating Curve 70 Power Dissipation---PD(W) 60 50 40 30 20 10 0 Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 4/6 0 50 100 150 200 Case Temperature ---TC(℃ ) BTN3501F3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 5/6 Carrier Tape Dimension BTN3501F3 CYStek Product Specification CYStech Electronics Corp. TO-263 Dimension Marking : A 2 C E Spec. No. : C606F3 Issued Date : 2005.11.24 Revised Date : 2005.11.30 Page No. : 6/6 α1 F N3501 B D 1 2 3 α2 Style : Pin 1.Base G 2.Collector 3.Emitter I J K L α3 H 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical DIM A B C D E F G H Inches Min. Max. 0.3800 0.4050 0.3300 0.3700 0.0550 0.5750 0.6250 0.1600 0.1900 0.0450 0.0550 0.0900 0.1100 0.0180 0.0290 Millimeters Min. Max. 9.65 10.29 8.38 9.40 1.40 14.61 15.88 4.06 4.83 1.14 1.40 2.29 2.79 0.46 0.74 DIM I J K L α1 α2 α3 Inches Min. Max. 0.0500 0.0700 *0.1000 0.0450 0.0550 0.0200 0.0390 - Millimeters Min. Max. 1.27 1.78 *2.54 1.14 1.40 0.51 0.99 6° 8° 6° 8° 0° 5° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501F3 CYStek Product Specification