BTN5551N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 225 150 -55~+150 Unit V V V mA mW °C °C BTN5551N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 80 80 30 52 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE4 Rank Range K 52~120 P 82~180 Q 120~270 R 180~390 Characteristic Curves C urrent Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=6V Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 100 0.1 1 10 100 Collector Current--- IC(mA) 10 0.1 1 10 100 Collector Current ---IC(mA) BTN5551N3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 3/4 C utoff Frequency vs Collector Current FT@VCE=12V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current ---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature - Ta(℃ ) BTN5551N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: G1 TE V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector D H K J C *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN5551N3 CYStek Product Specification