BTN6517N3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 BTN6517N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTP6520N3 Symbol BTN6517N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW °C °C BTN6517N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. 350 350 6 20 30 30 20 15 40 Typ. Max. 50 50 0.3 0.35 0.5 1.0 0.75 0.85 0.9 2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 Test Conditions IC=100μA IC=1mA IE=10μA VCB=250V VEB=5V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=100mA VCE=10V, IC=1mA VCE=10V,IC=10mA VCE=10V,IC=30mA VCE=10V,IC=50mA VCE=10V,IC=100mA VCE=20V, IC=10mA, f=20MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% BTN6517N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 100000 Ssturation Voltage---(mV) VCE=10V Current Gain---HFE 100 VCE(SAT)@IC=10IB 10000 1000 100 10 1 1 10 100 1000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 250 Power Derating Curve Power Dissipation---PD(mW) Saturation Voltage---(mV) VBE(SAT)@IC=10IB 200 150 100 50 0 100 1 10 100 Collector Current---IC(mA) 1000 0 50 100 150 200 Ambient Temperature---TA(℃) BTN6517N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: TE 1Z V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN6517N3 CYStek Product Specification