BTNA14A3

CYStech Electronics Corp. Gentral Purpose NPN Epitaxial Planar Transistor Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit BTNA14A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC Pd Tj Tstg Limits 30 30 10 0.5 625 150 -55~+150 Unit V V V A mW °C °C BTNA14A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCES ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 30 10K 20K 125 Typ. Max. 100 100 1.5 2.0 Unit V nA nA V V Test Conditions IC=100uA VCE=30V VEB=10V IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz Characteristic Curves C urrent Gain vs Collector Current 100000 Saturation Voltage---(mV) HFE@VCE=5V Current Gain---HFE 10000 VCE(SAT)@IC=1000IB Saturation Voltage vs Collector Current 10000 1000 1000 1 10 100 1000 Collector Current---IC(mA) 100 1 10 100 1000 Collector Current ---IC(mA) BTNA14A3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 3/4 ON Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) ON Voltage --- (mV) VBE(SAT)@IC=1000IB VBE(ON)@VCE=5V 1000 1000 1 10 100 1000 Collector Current ---IC(mA) 100 0.1 1 10 100 1000 Collector Current ---IC(mA) C utoff Frequency vs Collector Current 1 Cutoff Frequency---FT(GHZ) Power Dissipation--- PD(mW) 700 600 500 400 300 200 100 0 Power Derating Curve FT@VCE=5V 0.1 1 10 Collector Current---IC(mA) 100 0 50 100 150 Ambient Temperature---Ta(℃ ) BTNA14A3 CYStek Product Specification cystek TO-92 Dimension A B 1 2 3 CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 4/4 α2 Marking: α3 A14 C D H I E F G α1 Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA14A3 CYStek Product Specification