BTNA42N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 BTNA42N3 Description • High breakdown voltage. (BVCEO=300V) • Low collector output capacitance. (Typ. 3pF at VCB =30V) • Ideal for chroma circuit. Symbol BTNA42N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits 300 300 6 500 225 (Note) 556 150 -55~+150 Unit V V V mA mW ℃/W °C °C Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA42N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 52 40 50 Typ. 0.1 2 Max. 100 100 0.5 2. 0.9 270 3.0 Unit V V V nA nA V V V MHz pF Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Test Conditions IC=50µA IC=1mA IE=50µA VCB=200V VEB=6V IC=20mA, IB=2mA IC=30mA, IB=1.5mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range K 52~120 P 82~180 Q 120~270 Characteristic Curves C urrent Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=10V Current Gain---HFE 10000 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB 1000 100 100 10 0.1 1 10 100 Collector Current ---IC(mA) 10 0.1 1 10 100 Collector Current--- IC(mA) BTNA42N3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 3/4 C utoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=30V 100 0.1 1 10 100 Collector Current ---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTNA42N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C209N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: 1D TE V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector J *: Typical C D K H DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA42N3 CYStek Product Specification