BTNA44N3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 BTNA44N3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA. • Complementary to BTPA94N3 Symbol BTNA44N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limit 400 400 6 300 225 (Note) 556 150 -55~+150 Unit V V V mA mW °C/W °C °C Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BTNA44N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 hFE 2 *hFE 3 *hFE 4 fT Cob Min. 400 400 6 40 52 45 40 20 Typ. 0.1 Max. 10 10 0.4 0.5 0.75 1.5 270 7 Unit V V V µA µA V V V V MHz pF Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V. IE=0 VEB=6V,IC=0 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range K 52~120 P 82~180 Q 120~270 BTNA44N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves C urrent Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE 10000 Saturation Voltage-(mV) Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCESAT@IC=10IB 1000 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 0.1 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VBESAT@IC=10IB Power Dissipation---PD(mW) 250 200 150 100 50 0 Power Derating Curve 1000 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTNA44N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: TE 3D V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA44N3 CYStek Product Specification