CMBD2004A

CYStech Electronics Corp. High voltage switching (double) diodes Spec. No. : C335N3 Issued Date : 2003.05.30 Revised Date : Page No. : 1/4 CMBD2004/A/C/SN3 Description High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package. Single diodes and double diodes with different pinning are available. Features •Fast switching speed •Low forward voltage drop •Small plastic SMD package Mechanical Data •Case : SOT-23, molded plastic •Terminals : Solderable per MIL-STD-202 Method 208 •Weight : 0.008 grams(approx.) Pinning Pin 1 2 3 Description CMBD2004 CMBD2004A CMBD2004C CMBD2004S A K1 A1 A1 NC K2 A2 K2 K A1,A2 K1,K2 K1,A1 Outline SOT-23 3 1 2 (1) CMBD2004 (2)CMBD2004A Marking: Type CMBD2004 N3 CMBD2004AN3 CMBD2004CN3 CMBD2004SN3 Marking Code D53 DB8 DB7 DB6 (3)CMBD2004C (4)CMBD2004S Diode configuration and symbol CMBD2004/A/C/SN3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings(Ta=25℃, unless otherwise specified) Spec. No. : C335N3 Issued Date : 2003.05.30 Revised Date : Page No. : 2/4 • Maximum Temperatures Storage Temperature Tstg ................................................................................................... -65~+150 °C Junction Temperature Tj ............................................................................................................. +150 °C • Maximum Power Dissipation Total Power Dissipation Ptot (Note)........................................................................................... 350 mW • Maximum Voltages and Currents Repetitive Peak Reverse Voltage VRRM ............................................................................................ 300 V DC Blocking Voltage VR………………………………………………………………………….. 240V RMS Reverse Voltage VR(RMS)…………………………………………………………………….. 170V Continuous Forward Current IF (Note)…………………………………………………………… 225 mA Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA. Surge Non-repetitive Forward Current IFSM @ tp=1µs ........................................................................ 4A @ tp=1s…….…………………………………………. 1A • Thermal Resistance, Junction to Ambient Air RθJA……………………………………….……357℃/W Note : Parts mounted on FR-4 board. For double diodes, Ptot is the total power dissipation of both diodes. Characteristics (Ta=25°C) Characteristic Reverse Breakdown Voltage Forward Voltage (Note) Symbol VBR VF(1) VF(2) IR(1) IR(2) CD trr Condition IR=100µA IF=20mA IF=100mA VR=240V,Tj=25℃ VR=240V,Tj=150℃ VR=0V, f=1MHz IF=IR=30mA RL=100Ω measured at IR=3mA Min. 300 - Max. 870 1000 100 100 5 50 Unit V mV mV nA µA pF ns Reverse Leakage Current (Note) Diode Capacitance Reverse Recovery Time Notes: Pulse test, tp=380µs, duty cycle