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HBNP45S6R

HBNP45S6R

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    HBNP45S6R - General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) - Cystech Elec...

  • 数据手册
  • 价格&库存
HBNP45S6R 数据手册
CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45S6R Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. Equivalent Circuit HBNP45S6R SOT-363R Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) 60 50 7 150 TR2 (PNP) -60 -50 -6 -150 200(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 150mW per element must not be exceeded. HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) • TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob • TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 200 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 600 3.5 Unit V V V µA µA V MHz pF Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 2/6 Test Conditions IC=100µA IC=1mA IE=50µA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Min. -60 -50 -6 200 60 - Typ. -0.25 140 4 Max. -0.1 -0.1 -0.5 600 5 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Characteristic curves • TR1 (NPN) C urrent Gain vs Collector Current 1000 HFE@VCE=6V Saturation Voltage-(mV) Current Gain---HFE 1000 Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 3/6 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB 100 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 10 0.1 1 10 100 1000 Collector Current--- IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 C utoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 100 0.1 1 10 100 1000 Collector Current ---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 HBNP45S6R CYStek Product Specification CYStech Electronics Corp. • TR2 (PNP) C urrent Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=6V Current Gain---HFE 1000 Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 4/6 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB 100 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 C utoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 100 0.1 1 10 100 1000 Collector Current---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curves 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) d ual single HBNP45S6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 5/6 Carrier Tape Dimension HBNP45S6R CYStek Product Specification CYStech Electronics Corp. SOT-363R Dimension Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 6/6 Marking: 46 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.20 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBNP45S6R CYStek Product Specification
HBNP45S6R 价格&库存

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