MTA06N03J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 1/7 MTA06N03J3 Features BVDSS ID RDS(ON) 25V 80A 6mΩ • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol MTA06N03J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTA06N03J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 25 ±20 80 50 170 53 140 40 83 45 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 2/7 Value 1.8 75 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS *ID(ON) *RDS(ON) *GFS Dynamic *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr Min. 25 1 80 Typ. 1.5 5.3 7.6 25 53 30 8 17 22 16 65 10 4840 620 435 1.2 32 12 Max. 3 ±100 1 25 6 9.5 80 170 1.3 Unit V V nA μA A mΩ S Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±20, VDS=0V VDS =20V, VGS =0V VDS =20V, VGS =0V, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=30A VGS =5V, ID=24A VDS =5V, ID=24A nC ID=30A, VDS=15V, VGS=10V ns VDS=15V, ID=25A, VGS=10V, RGS=2.7Ω pF Ω A V ns nC VGS=0V, VDS=15V, f=1MHz VGS=15mV, VDS=0V, f=1MHz IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTA06N03J3 MTA06N03J3 Package TO-252 (RoHS compliant & Halogen-free) Shipping 2500 pcs / Tape & Reel Marking A06N03 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 3/7 ON-R GION C AC R TIC E HAR TE IS 100 10V 80 I D,DRAIN - S OURCE CURRENT( A ) 4V 60 3.8V 40 3.5V 20 RDS(ON),NORMALIZED ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE 3 7V 5V 4.5V 4.3V V GS 3.5V = DRAIN - S OURCE ON - RES TANCE IS 2.5 4V 4.5V 2 5V 5.5V 1.5 6V 7V 10V 1 0 0 1 1.5 0.5 VDS ,DR AIN- S OUR EVOLTAGE( V ) C 2 2.5 3 0.5 0 20 D 40 60 80 100 I ,DRAIN CURRENT( A ) ON- RES TANC VARIATION WITH TEMPERATURE IS E 1.8 ID = 30A VGS= 10V ON-RES TANC VARIATION WITH GATE-TO-S IS E OURCEVOLTAGE 0.025 ID = 30A 0.020 RDS(ON) ,ON-RES TANCE(OHM) IS DRAIN - S OURCE ON - RES TANCE IS 1.6 RDS(ON),NORMALIZED 1.4 0.015 1.2 0.010 1.0 T = 125°C A T = 25° C A 0.8 0.6 0.005 -50 -25 0 25 50 75 100 125 150 175 0 2 Tj ,JUNC TION TE MPE ATUR R E(°C) 6 4 V ,GATETO S OURC VOLTAGE E GS 8 10 TR FE C AC R TIC ANS R HAR TE IS S 100 BODYDIODEFOR WAR VOLTAGEVAR D IATION WITH S C OUR E C R NT AND TE UR E MPE ATUR R E 60 I ,REVERS DRAIN CURRENT( A ) E VDS= 10V 80 I D,DRAIN CURRENT( A ) TA = -55 °C 25 °C 125 °C V = 0V GS 10 TA = 125°C 1 25°C -55°C 0.01 60 0.1 40 20 S 0.001 0 0 2 1 VGS,GATETO S OUR EVOLTAGE C 3 4 5 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,BODYDIODEFOR WAR VOLTAGE V ) D ( MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 4/7 G A T E C H A R G E C H A R A C T E R IS T IC S 12 ID = 3 0 A 10 4 CA P A CI T A N CE CH A RA CT ERI ST I CS Ci ss 10 VGS ,GATE-SOURCE VOLTAGE (V) 8 V DS =5V 10V 15V C-CAPACITANCE (pF) 10 3 6 Co ss Cr ss 4 10 2 2 f = 1 M Hz V G S= 0 V 0 Q g 0 20 40 ,G A T E C H A R G E (n C ) 60 0 5 10 15 20 25 30 V D S - D RA I N - t o - SO U R CE V LT A G E ( V ) MAX IMUM S EOP R AF E ATINGAR A E 300 200 100 50 I D,DRAIN CURRENT( A ) 20 10 5 1000 S LEP EMAX ING ULS IMUM POWE DIS IPATION RS 10μ s 3000 S INGLEP E ULS θ RJC = 1.8°C /W TC = 25°C Rds( it Lim on) 100 μ s 2500 1ms 10m s 100m s DC POWER( W ) 2000 1500 2 1 0.5 G V S = 10V S LEP E ING ULS R JC= 1.8° /W C θ Tc = 25° C 500 0 0.5 1 2 3 5 10 20 30 50 0.01 0.1 V ,DR DS AIN- S C VOLTAG OUR E E 10 1 S INGLEP ETIME(S C ULS E) 100 1000 Transient Thermal Response Curve 1 r(t),Normalized Effective Transient Thermal Resistance 0.5 0.3 0.2 0.2 Duty Cycle = 0.5 0.1 0.1 0.05 0.05 0.03 0.02 0.02 0.01 S ingle Pulse Notes: DM 1.Duty Cycle,D = t2 2.R =1.8°C/ W 3.T - TC = P * R (t) J θJC θJC t1 0.01 -2 10 4.R (t)=r(t) * R θJC θJC 10 -1 1 t 1 ,Time (sec) 10 100 1000 MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTA06N03J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature MTA06N03J3 Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 7/7 Marking: B L F G D Device Name Date code 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA06N03J3 CYStek Product Specification