MTB07P03Q8

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 1/6 MTB07P03Q8 Description BVDSS ID RDSON(max) -30V -15A 7.5mΩ The MTB07P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=7.5mΩ@VGS=-10V, ID=-12A RDS(ON)=12mΩ@VGS=-5V, ID=-9A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTB07P03Q8 Outline SOP-8 G：Gate S：Source D：Drain MTB07P03Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C Continuous Drain Current @TC=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω TA=25 °C Power Dissipation TA=100 °C Operating Junction and Storage Temperature Range Note : 1.Pulse width limited by maximum junction temperature. Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 2/6 Symbol BVDSS VGS ID ID IDM IAS EAS PD Tj ; Tstg Limits -30 ±25 -15 -11 -60 -25 31.25 3 1.5 -55~+175 Unit V V A A A A mJ W W °C Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Static BVDSS VGS(th) IGSS IDSS IDSS ID(ON) RDS(ON) GFS Dynamic Ciss Coss Crss td(ON) (Note 1&2) tr (Note 1&2) td(OFF) (Note 1&2) tf (Note 1&2) Qg(VGS=10V) (Note 1&2) Qg(VGS=5V) (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) Rg 15545 3776 3507 26 22 75 15 56 40 15 18 3 pF -30 -1 -15 -1.5 6 9 28 -3 ±100 -1 -10 7.5 12 V V nA μA μA A mΩ S Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-20V, VGS=0, Tj=125°C VDS=-5V, VGS=-10V ID=-12A, VGS=-10V ID=-9A, VGS=-5V VDS=-5V, ID=-12A (Note 1) (Note 1) (Note 1) VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=2.7Ω ns nC Ω VDS=-15V, ID=-10A, VGS=-10V, VGS=15mV, VDS=0, f=1MHz MTB07P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 3/6 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr Typ. 52 60 Max. -3.6 -14.4 -1.2 Unit A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Test Conditions Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RθJC RθJA Typical Maximum 25 50 Unit °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. MTB07P03Q8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves On-Region Characteristics 60 VGS= - 10V 48 - 6.0V - 4.5V Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 4/6 O esistance Variation with D C n-R rain urrent and G Voltage ate 2.5 2.4 RDS(ON), Normalized Drain-S ource On-Resistance 2.2 2.0 1.8 -4.0V 1.6 1.4 1.2 1.0 -4.5V -5.0V -6.0V -10V 0.0 0 15 30 - ID, D C rain urrent( A) 45 60 VGS=-3.5V - 4.0V -ID- Drain Current(A) 36 - 3.5V 24 - 3.0V 12 0 0 1 -VDS- Drain-to-S ource Voltage(V) 2 3 1.6 On-Resistance Variation with Temperature 0.030 On-Resistance Variation with Gate-S ource Voltage I D = - 7.5 A 0.025 RDS(ON) - On-Resistance(Ω) 0.020 0.015 TA = 125° C 0.010 0.005 0 I D= - 15 A VGS = - 10V 1.4 RDS(on) - Normalized Drain-S ource On-Resistance 1.2 1.0 0.8 TA = 25° C 0.6 -50 -25 75 100 0 25 50 TJ - Junction Temperature (°C) 125 150 175 2 4 6 - VGS- Gate-S ource Voltage( V ) 8 10 Transfer Characteristics 40 VDS = - 5V - 55° C 30 Body Diode Forward Voltage Variation with S ource Current and Temperature 100 10 -Is - Reverse Drain Current(A) 25° C VGS = 0V 1 TA = 125°C 25° C -55°C -I D - Drain Current(A) 20 TA = 125°C 0.1 0.01 10 0.001 0 1.5 0.0001 2 2.5 3 -VGS - Gate-to-Source Voltage(V) 3.5 4 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 MTB07P03Q8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID = - 15A - VGS - Gate-to-S ource Voltage(V) 8 VDS = - 5V - 10V - 15V Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 5/6 C apacitance C haracteristics 20000 C iss 16000 f = 1 MHz V =0 V GS Capacitance(pF) 6 12000 4 8000 C oss 4000 C rss 2 0 0 15 30 Qg - Gate Charge(nC) 45 60 75 0 0 15 5 10 - VDS, Drain-to-S ource Volt age(V) 20 25 30 100 Maximum S O afe perating Area R (ON) LIMIT DS 100μs 1ms 10ms 100ms 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R JA= 125° C/ W θ TA = 25° C 40 P(pk),Peak Transient Power(W) - ID, Drain Curent( A ) 10 1s 10s 1 VGS=-10V S LEP E ING ULS R JA=125°C θ /W TA= 25°C 0.1 1 D C 30 20 0.1 10 0.01 0.01 10 100 0 0.001 0.01 0.1 ource Voltage( V) -VDS, Drain-S 1 t 1 ,Time (sec) 10 100 1000 Transient Thermal Resistance Curve r(t), Normalized Effetive Transient Thermal Resistance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 RθJA(t)= r(t) * RθJA RθJA= 125° C/W 0.001 0.0001 0.001 0.01 0.1 t1,TIME( sec ) 1 10 100 1000 MTB07P03Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C451Q8 Issued Date : 2009.05.13 Revised Date : Page No. : 6/6 Marking: I B C H Device Name J D Front View Part A Date Code E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB07P03Q8 CYStek Product Specification