MTB09N03H8

CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 1/6 MTB09N03H8 Description BVDSS ID RDSON(max) 30V 50A 9.5mΩ The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB09N03H8 Outline Power pak Pin 1 G：Gate D：Drain S：Source MTB09N03H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg 30 ±20 50 35 140 *1 37.5 70 15 *2 60 32 -55~+175 V A mJ W °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 50 *3 Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) Dynamic Ciss Coss Crss MTB09N03H8 Min. 30 1.0 50 - Typ. 1.7 20 8 15 2020 275 160 Max. 3.0 ±100 1 25 9.5 19 - Unit V V S nA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=25A VGS =4.5V, ID=20A *1 *1 *1 pF VGS=0V, VDS=15V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. 23 13 4.7 7.4 10 8 30 5 1.7 22 12 Max. 50 140 1.3 Unit nC Test Conditions Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 3/6 VDS=15V, VGS=10V, ID=25A ns Ω VDS=15V, ID=20A, VGS=10V, RGS=2.7Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTB09N03H8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 4/6 MTB09N03H8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 5/6 MTB09N03H8 CYStek Product Specification CYStech Electronics Corp. Power pak Dimension Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 6/6 Marking: Device Name Date Code 8-Lead power pak Plastic Package CYStek Package Code: H8 *: Typical DIM A B C D E F G H Inches Min. Max. 0.1890 0.1969 0.2244 0.2283 0.2323 0.2402 0.0130 0.0201 0.0500* 0.0354 0.0472 0.0067 0.0118 0.1445 0.1583 Millimeters Min. Max. 4.80 5.00 5.70 5.80 5.90 6.10 0.33 0.51 1.27* 0.90 1.20 0.17 0.30 3.67 4.02 DIM I J K L M Inches Min. Max. 0.0161 0.0240 0.1331 0.1488 0.0433 0.0201 0.0280 - Millimeters Min. Max. 0.41 0.61 3.38 3.78 1.10 0.51 0.71 0° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB09N03H8 CYStek Product Specification