MTB20N03Q8

CYStech Electronics Corp. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 1/6 N-Channel LOGIC Level Enhancement Mode Power MOSFET MTB20N03Q8 Description BVDSS ID RDSON(max) 30 V 8A 20mΩ The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • UIS, Rg 100% tested • Pb-free & Halogen-free package Symbol MTB20N03Q8 Outline SOP-8 G：Gate D：Drain S：Source Pin 1 MTB20N03Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=8A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=100 °C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg 30 ±20 8 6 32 *1 8 3.2 1.6 *2 3 1.5 -55~+175 V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. Symbol Rth,j-c Rth,j-a Value 25 50 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *ID(ON) *RDS(ON) Dynamic Qg (VGS=10V) *1, 2 Qg (VGS=5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss Rg MTB20N03Q8 Min. 30 1.0 8 - Typ. 1.5 16 15.5 23 11 6 1.2 3.3 1115 116 82 2 Max. 3.0 ±100 1 25 20 31 - Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=8A VGS=±20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VDS =10V, VGS=10V VGS =10V, ID=8A VGS =5V, ID=6A nC ID=8A, VDS=15V, VGS=10V pF Ω VGS=0V, VDS=15V, f=1MHz VGS=15mV, VDS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic td(ON) *1, 2 11 tr 16 *1, 2 ns td(OFF) *1, 2 36 tf *1, 2 20 Source-Drain Diode Ratings and Characteristics IS *1 2.3 A ISM *3 9.2 VSD *1 1.2 V trr 50 ns Qrr 2 nC Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 3/6 Test Conditions VDS=15V, ID=1A, VGS=10V, RG=6Ω IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Ordering Information Device MTB20N03Q8 Package SOP-8 (RoHS compliant & Halogen-free package) Shipping 3000 pcs / Tape & Reel Marking B20N03 MTB20N03Q8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 4/6 30 V = 10V 6V 7V GS On-Region Characteristics On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 VGS = 3.5 V 2.0 RDS(ON) -Normalized Drain-S ource On-Resistance 4.0 V 25 ID - Drain Current(A) 20 5V 4.5V 1.8 1.6 1.4 1.2 1.0 0.8 0 6 15 4V 4.5 V 5.0 V 6.0 V 7.0 V 10 V 10 5 0 3.5V 0 1 2 3 V - Drain S ource Voltage(V) DS 4 5 12 18 ID - Drain Current(A) 24 30 On-Resistance Variation with Temperature 1.9 I D = 8A V = 10V GS RDS(on) - Normalized Drain-S ource On-Resistance 0.09 0.08 RDS(ON) - On-Resistance( Ω ) 0.07 0.06 0.05 0.04 0.03 0.02 On-Resistance Variation with Gate-to-S ource Voltage ID = 8 A 1.6 1.3 1.0 TA = 125°C TA = 25°C 0.7 0.4 -50 0.01 -25 75 0 25 50 TJ - Junction Temperature (° C) 100 125 150 2 4 8 6 VGS- Gate-S ource Voltage( V ) 10 30 V = 10V DS Transfer Characteristics 100 Body Diode Forward Voltage Variation with S ource Current and Temperature V = 0V GS Is - Reverse Drain Current( A ) 25 20 15 125°C 10 5 0 1 1.5 2.5 2.0 GS V - Gate-S ource Voltage( V ) 3.0 3.5 TA = -55° C 25° C 10 TA = 125°C ID - Drain Current(A) 1 25° C 0.1 -55° C 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VD - Body Diode Forward Voltage( V ) S 1.2 1.4 MTB20N03Q8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID = 8A VGS - Gate-S ource Voltage( V ) 8 15V Capacitance(pF) 1500 Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 5/6 Capacitance Characteristics 1350 1200 1050 900 750 600 450 300 150 Coss Crss 0 5 15 10 VDS - Drain-S ource Voltage( V ) 20 25 30 Ciss f = 1MHz VGS = 0 V VDS = 5V 10V 6 4 2 0 0 4 8 Q g - Gate Charge( nC ) 12 16 0 Maximum S Operating Area afe 100 RDS(ON) Limit 100μs 10 ID - Drain Current( A ) 10ms 100ms 1ms S ingle Pulse Maximum Power Dissipation 50 S ingle Pulse R JA= 125° C/ W θ TA = 25°C P( pk ),Peak Transient Power( W ) 40 30 1 1s 10s DC V = 10V GS S ingle Pulse RθJA= 125°C/ W TA = 25°C 1 10 VDS - Drain-S ource Voltage( V ) 100 20 0.1 10 0.01 0.1 0 0.001 0.01 0.1 1 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 r( t ),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 S ingle Pulse 1.Duty Cycle,D = 2.RθJA =125° C/ W t1 t2 3.TJ - TA = P * R JA (t) θ 4.R JA(t)=r(t) + R JA θ θ 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t 1 ,Time (sec) MTB20N03Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 6/6 Marking: I B C H Device Name Date Code J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20N03Q8 CYStek Product Specification