MTB35N04J3

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 MTB35N04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 12A 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTB35N04J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 40 ±20 12 8 48 10 5 2 36 12 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 2/7 Value 4.1 80 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. 40 1.8 12 - Typ. 2.3 19 30 40 9.1 2.3 3 2.5 7.5 12 4 796 84 59 2.5 15 8 Max. 3.2 ±100 1 25 35 50 12 48 1.3 - Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =7V, ID=8A *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr nC ID=10A, VDS=20V, VGS=10V VDS=20V, ID=1A, VGS=10V, RG=6Ω ns pF Ω A V ns nC VGS=0V, VDS=20V, f=1MHz VGS=15mV,VDS=0, f=1MHz IF=IS, VGS=0V IF=5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB35N04J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking B35N04 MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 3/7 On-Region Characteristics 50 V = 10V GS 8.0V 7.0V On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 2.0 VGS = 3.5 V 5.0 V 40 6.0V RDS(ON) -Normalized Drain-S ource On-Resistance ID- Drain Current(A) 30 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 I D - Drain Current(A) 40 50 10 V 6.0 V 7.0 V 8.0 V 20 5.0V 4.0V 3.5V 10 0 0 1 3 2 V - Drain S ource Voltage(V) DS 4 5 On-Resistance Variation with Temperature 1.9 ID = 10A V = 10V GS 1.6 R (on) - Normalized DS Drain-S ource On-Resistance On-Resistance Variation with Gate-to-S ource Voltage 0.09 0.08 0.07 0.06 RDS(ON) - On-Resistance(Ω) 0.05 0.04 0.03 0.02 0.01 2 4 6 VGS- Gate-to-S ource Voltage(V) 8 10 TA = 25°C T = 125°C A ID = 10 A 1.3 1.0 0.7 0.4 -50 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 150 Transfer Characteristics 30 VDS= 10V TA = -55° C 20 25° C 15 10 5 0 125° C 25 ID- Drain Current(A) 100 Body Diode Forward Voltage Variation with S ource Current and Temperature V GS= 0V Is - Reverse Drain Current(A) 10 T A= 125° C 1 25° C 0.1 -55° C 0.01 1 2 3 V - Gate-to-S ource Voltage(V) GS 4 5 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD- Body Diode Forward Voltage(V) 1.2 1.4 MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID = 10A 8 VGS - Gate S ource Voltage(V) Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 4/7 1200 Capacitance Characteristics f = 1MHz VGS = 0 V VDS = 15V 20V 900 Capacitance( pF ) Ciss 6 600 4 2 0 0 4 8 Q g - Gate Charge(nC) Maximum Safe Operating Area 300 Coss 0 Crss 0 10 20 VDS - Drain-S ource Voltage( V ) 30 40 12 16 80 50 RDS(ON) Limit 50 S ingle Pulse Maximum Power Dissipation Single Pulse R JC = 6°C/ W θ TC = 25°C 1ms I D - Drain Current(A) 10ms P(pk),Peak Transient Power(W) 100μs 40 30 10 DC VGS= 10V Single Pulse RθJC= 6°C/ W TC = 25°C 0 1 100ms 1s 10s 20 10 0 0.001 1 0 10 VDS - Drain-Source Voltage(V) 40 50 0.01 0.1 1 10 t 1 ,Time (sec) 100 1000 1 Duty Cycle = 0.5 Transient Thermal Response Curve r(t),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 Notes: PDM t1 t2 0.01 Single Pulse 1.Duty Cycle,D = 2.R JC =6°C/ W θ t1 t2 3.T - TC = P * R JC (t) θ J 4.R JC(t)=r(t) * R JC θ θ 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB35N04J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 7/7 Marking: B L F G D Device Name Date code 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB35N04J3 CYStek Product Specification