MTB60N06J3

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 MTB60N06J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 60V 12A 60mΩ Equivalent Circuit MTB60N06J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTB60N06J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 60 ±20 12 8 30 12 7.2 3.6 20 10 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 2/7 Value 7.5 80 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. 60 1.0 12 - Typ. 2.0 19 53 80 11 2.2 2.4 10 7.5 18 6 913 65 53 2.5 15 8 Max. 3.2 ±100 1 25 60 96 12 48 1.3 - Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =48V, VGS =0 VDS =40V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =5V, ID=8A *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr nC ID=10A, VDS=20V, VGS=10V VDS=20V, ID=1A, VGS=10V, RG=6Ω ns pF Ω A V ns nC VGS=0V, VDS=20V, f=1MHz VGS=15mV, VDS=0, f=1MHz IF=IS, VGS=0V IF=5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB60N06J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking B60N06 MTB60N06J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves On-Region Characteristics VGS = 10V 7V 6V 5V 4.5V Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 3/7 30 On-Resistance Variation with Drain Current and Gate Voltage 1.8 V GS= 4.0 V RDS(ON) -Normalized Drain-S ource On-Resistance 1.6 4.5 V 5.0 V 6.0 V 7.0 V 1.0 0.8 0 6 12 18 ID - Drain Current( A ) 24 30 10 V 24 ID - Drain Current( A ) 18 1.4 12 4V 1.2 6 0 0 1 2 V - Drain-S ource Voltage( V ) DS 3 4 2.2 2.0 RDS(on) - Normalized Drain-S ource On-Resistance 1.8 On-Resistance Variation with Temperature I D = 10A VGS = 10V On-Resistance Variation with Gate-to-S ource Voltage 0.14 0.12 RDS(ON) - On-Resistance( Ω ) 0.10 0.08 0.06 0.04 0.02 TA = 25° C TA = 125° C ID = 5 A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 75 100 0 25 50 TJ - Junction Temperature (°C) 125 150 175 0 2 4 6 V - Gate-S ource Voltage( V ) GS 8 10 Transfer Characteristics 20 VDS = 5V 16 ID - Drain Current( A ) TA = -55°C 125°C 12 25°C Body Diode Forward Voltage Variation with S ource Current and Temperature 100 VGS = 0V Is - Reverse Drain Current( A ) 10 1 0.1 0.01 0.001 0.0001 T A= 125°C 25° C -55° C 8 4 0 1 4 2 3 V - Gate-S ource Voltage( V ) GS 5 6 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage( V ) 1.0 1.2 MTB60N06J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 4/7 10 ID = 10A VGS - Gate-to-S ource Voltage(V) 8 Gate C harge Characteristics 1500 1350 1200 1050 Capacitance(pF) 900 750 600 450 300 150 Capacitance Characteristics f = 1MHz VGS = 0 V VDS = 15V 30V Ciss 6 4 2 0 0 2 4 6 8 Q g - Gate Charge( nC) 10 12 14 Coss Crss 0 10 20 30 VDS - Drain-S ource Voltage( V ) 40 50 60 0 Maximum S Operating Area afe 80 50 100μs RDS(ON) Limit 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R JC= 7.5° C/ W θ TA = 25°C ID - Drain Current( A ) 1ms 10ms 100ms 1s 10s DC P( pk ),Peak Transient Power( W ) 40 30 10 20 1 0 0 V = 10V GS S ingle Pulse RθJC = 7.5°C W / T = 25°C C 10 0 0.001 1 10 VDS - Drain-S ource Voltage( V ) 60 0.01 1 0.1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 0.2 r(t),Normalized Effective Transient Thermal Resistance 0.1 0.1 0.05 0.02 0.01 Notes: PDM t1 t2 0.01 Single Pulse 1.Duty Cycle,D = 2.R JC =7.5° C/ W θ t1 t2 3.T - TC = P * R JC (t) θ J 4.R JC(t)=r(t) * R JC θ θ 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MTB60N06J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTB60N06J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB60N06J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 7/7 Marking: B L F G D B60 N06 Device Name Date code 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB60N06J3 CYStek Product Specification