MTBA5N10J3

CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 MTBA5N10J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID RDSON(MAX) 100V 10A 150mΩ Equivalent Circuit MTBA5N10J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTBA5N10J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 100 ±30 10 7 40 12 7.2 3.6 35 15 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 2/7 Value 4.2 62.5 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. 100 1 10 - Typ. 2 130 150 8 18.8 3.8 4.5 15 35 25 25 1070 52 40 2 120 520 Max. 3 ±100 1 25 150 175 10 40 1.3 - Unit V V nA μA μA A mΩ mΩ S nC Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VGS=±30, VDS=0 VDS =80V, VGS =0 VDS =70V, VGS =0, TJ=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =5V, ID=10A VDS =5V, ID=10A ID=10A, VDS=80V, VGS=10V VDS=50V, ID=1A, VGS=10V, RG=6Ω GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr ns pF Ω A V ns nC VGS=0V, VDS=25V, f=1MHz VGS=15mV, VDS=0, f=1MHz IF=IS, VGS=0V IF=10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTBA5N10J3 Package Shipping TO-252 2500 pcs / Tape & Reel (Pb-free lead plating & Halogen-free package) Marking BA5N10 MTBA5N10J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 3/7 MTBA5N10J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 4/7 MTBA5N10J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTBA5N10J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBA5N10J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Marking: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 7/7 Device Name Date code Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A A1 B B1 B2 C D D2 D3 Inches Min. Max. 0.0827 0.0984 0.0374 0.0512 0.0118 0.0335 0.0157 0.0370 0.0236 0.0394 0.0157 0.0236 0.2087 0.2441 0.2638 0.2874 0.0866 0.1181 Millimeters Min. Max. 2.10 2.50 0.95 1.30 0.30 0.85 0.40 0.94 0.60 1.00 0.40 0.60 5.30 6.20 6.70 7.30 2.20 3.00 DIM E E2 H L L1 L2 L3 P Inches Min. Max. 0.2520 0.2638 0.1890 0.2146 0.3622 0.3996 0.0350 0.0669 0.0354 0.0650 0.0197 0.0433 0.0000 0.0118 0.0827 0.0984 Millimeters Min. Max. 6.40 6.70 4.80 5.45 9.20 10.15 0.89 1.70 0.90 1.65 0.50 1.10 0.00 0.30 2.10 2.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBA5N10J3 CYStek Product Specification