MTC2804Q8

CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 Description BVDSS ID RDSON(max) N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • RoHS compliant package Equivalent Circuit MTC2804Q8 Outline SOP-8 G：Gate S：Source D：Drain MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 2/9 Limits N-channel P-channel Unit Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C (Note 1) Continuous Drain Current @TC=100 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @TA=25°C Linear Derating Factor (Note 1) BVDSS VGS ID ID IDM Pd Tj, Tstg Rth,ja Rth,jc 40 ±20 7 6 28 -40 ±20 -6 -5 -24 Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case 2.4 0.016 -55~+175 62.5 25 V V A A A W W / °C °C °C/W °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - 40 1.0 - 1.5 25 30 19 916 79 56 2.3 7.2 11 6 9.1 2.3 3 - 3.0 ±100 1 25 28 36 1.3 7 20 V V nA μA μA mΩ S VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=32V, VGS=0 VDS=30V, VGS=0, Tj=125°C ID=7A, VGS=10V ID=6A, VGS=7V VDS=5V, ID=7A pF VDS=20V, VGS=0, f=1MHz ns VDS=10V, ID=1A, VGS=10V, RG=6Ω nC VDS=20V, ID=7A, VGS=10V V A A VGS=0V, IS=7A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) Min. -40 -1.0 Typ. -1.5 38 46 11 1039 327 301 6.5 9.5 18 10 9 1.5 2.9 Max. -3.0 ±100 -1 -25 44 55 -1.3 -6 -20 Unit V V nA μA μA mΩ S Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 3/9 P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-32V, VGS=0 VDS=-30V, VGS=0, Tj=125°C ID=-6A, VGS=-10V ID=-5A, VGS=-7V VDS=-5V, ID=-6A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM - pF VDS=-20V, VGS=0, f=1MHz ns VDS=-10V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-20V, ID=-6A, VGS=-10V V A VGS=0V, IS=-6A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 4/9 On-Region Characteristics 25 V = 10V GS 8.0V 7.0V On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 2.0 20 6.0V RDS(ON) -Normalized Drain-S ource On-Resistance ID- Drain Current(A) 15 1.8 1.6 1.4 1.2 1.0 0.8 0 5 VGS = 6.0 V 7.0 V 8.0 V 10 V 10 5 0 0 1 2 3 V - Drain-S ource Voltage(V) DS On-Resistance Variation with Temperature 4 5 15 10 I D - Drain Current(A) 20 25 1.9 ID = 7A V = 10V GS 1.6 R (on) - Normalized DS Drain-S ource On-Resistance On-Resistance Variation with Gate-to-S ource Voltage 0.09 0.08 0.07 ID = 3.5 A 1.3 0.06 RDS(ON) - On-Resistance(Ω) 0.05 T = 125°C A 0.04 0.03 TA = 25°C 0.02 0.01 2 4 6 VGS- Gate-S ource Voltage(V) 8 10 1.0 0.7 0.4 -50 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 150 Transfer Characteristics 18 VDS= 10V 100 Body Diode Forward Voltage Variation with S ource Current and Temperature V GS= 0V Is - Reverse Drain Current(A) 15 ID- Drain Current(A) TA = -55°C 12 25°C 9 6 3 0 125°C 10 T A= 125°C 1 25°C 0.1 -55°C 0.01 3 4 5 V - Gate-to-S ource Voltage(V) GS 6 7 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD- Body Diode Forward Voltage(V) 1.2 1.4 MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 5/9 Gate Charge Characteristics 10 ID = 7A 8 VDS = 15V VGS - Gate S ource Voltage(V) 6 20V Capacitance Characteristics 1200 f = 1MHz VGS = 0 V Ciss 900 Capacitance( pF ) 600 4 300 Coss 0 Crss 0 10 20 VDS - Drain-S ource Voltage( V ) 30 40 2 0 0 4 8 Q g - Gate Charge(nC) Maximum S Operating Area afe RDS(ON) Limit 10 ID - Drain Current( A ) 100μs 1ms 10ms 100ms 12 16 S ingle Pulse Maximum Power Dissipation 50 S ingle Pulse R JA = 125°C/ W θ TA = 25°C 100 P( pk ),Peak Transient Power( W ) 100 40 30 1 1s 10s DC 20 VGS= 10V 0.1 S ingle Pulse RθJA= 125°C/ W TA = 25°C 0.01 0.1 10 1 10 VDS - Drain-S ource Voltage( V ) 0 0.001 0.01 0.1 1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 r( t ),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 S ingle Pulse 1.Duty Cycle,D = 2.RθJA =125°C/ W t1 t2 3.TJ - TA = P * R JA (t) θ 4.R JA (t)=r(t) + R JA θ θ 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 6/9 On-R esistance Variation with Drain C urrent and Gate Voltage 25 On-R egion C haracteristics VGS = - 10.0V - 8.0V 2.5 20 - 7.0V -ID- Drain Current(A) 15 - 6.0V RDS(ON) -Normalized Drain-S ource On-Resistance 2 1.5 V = - 6.0 V GS - 7.0 V - 8.0 V 10 1 - 10.0 V 5 0 0.5 0 1 2 3 -V - Drain-to-S ource Voltage(V) DS 4 5 0 5 10 15 - ID - Drain C urrent(A) 20 25 1.9 On-R esistance Variation with Temperature ID = -6 A VGS = - 10V 0.2 On-R esistance Variation with Gate-to-S ource Voltage ID = - 3A RDS(ON) - On-Resistance(Ω) 0.15 1.6 RDS(on) - Normalized Drain-S ource On-Resistance 1.3 0.1 TA = 125°C 0.05 TA = 25°C 0 1.0 0.7 0.4 -50 -25 75 25 50 0 TJ - J unction Temperature (°C ) 100 125 150 2 6 4 - VGS- Gate-to-S ource Voltage(V) 8 10 12 10 -ID - Drain Current( A ) 8 6 4 2 0 2 Transfer C haracteristics V = - 10V DS T = -55°C A 100 Body Diode Forward Voltage Variation with S ource C urrent and Temperature 10 -Is - Reverse Drain Current(A) VGS = 0V 25°C 1 TA = 125°C 0.1 25°C -55°C 125°C 0.01 0.001 3 4 -V S - G ate-S ource Voltage( V ) G 5 6 0 0.4 0.2 0.6 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves(Cont.) Gate C harge C haracteristics 10 I D = - 6A - VGS - Gate-to-S ource Voltage(V) 8 VDS = - 15V - 20V 6 Capacitance(pF) 900 1200 Ciss 1500 Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 7/9 Capacitance Characteristics f = 1 MHz VGS = 0 V 4 600 Coss 300 Crss 2 0 0 3 6 Qg - Gate C harge(nC ) 9 12 0 0 20 10 - V , Drain-S ource Voltage(V) DS 30 40 100 Maximum S Operating Area afe RDS(ON) Limit S ingle Pulse Maximum Power Dissipation 50 S ingle Pulse R JA = 125°C/ W θ TA = 25°C 10 -I D - Drain Current( A ) 100μs 1ms 10ms 100ms P( pk ),Peak Transient Power( W ) 40 30 1 1s 10s DC 20 VGS= 10V 0.1 S ingle Pulse RθJA= 125°C/ W TA = 25°C 0.01 0.1 10 1 10 -VDS - Drain-S ource Voltage( V ) 100 0 0.001 0.01 0.1 1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 r( t ),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 S ingle Pulse 1.Duty Cycle,D = 2.RθJA =125°C/ W t1 t2 3.TJ - TA = P * R JA (t) θ 4.R JA (t)=r(t) + R JA θ θ 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 8/9 MTC2804Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 9/9 Marking: I B C H Device Name Date Code 2804SS □□□□ J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2804Q8 CYStek Product Specification