MTC3504BJ4

CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 1/11 MTC3504BJ4 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package N-CH BVDSS ID RDSON(MAX) 40V 12A 35mΩ P-CH -40V -9A 44mΩ Equivalent Circuit MTC3504BJ4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% VDS VGS ID ID IDM Pd Tj, Tstg 40 ±20 12 8 48 -40 ±20 -9 -6 -36 V A W °C 25 18 -55~+175 MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Symbol Thermal Resistance, Junction-to-case, max Rth,j-c Thermal Resistance, Junction-to-ambient, max * 1 Rth,j-a 2 Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper. Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 2/11 Value 6 42 Unit °C/W °C/W N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 t f *1 Ciss Coss Crss Source-Drain Diode I S *1 ISM *2 VSD *1 Min. 40 1.8 12 Typ. 2.3 19 30 40 9.1 2.3 3 2.5 7.5 12 4 796 84 59 Max. 3.2 ±100 1 25 35 50 12 48 1.3 Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =5V, VGS =10V VGS =10V, ID=10A VGS =7V, ID=8A nC ID=15A, VDS=20V, VGS=10V VDS=10V, ID=1A, VGS=10V, RG=6Ω ns pF VGS=0V, VDS=20V, f=1MHz A V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1 Qgs *1 Qgd *1 td(ON) *1 tr *1 td(OFF) *1 t f *1 Ciss Coss Crss Source-Drain Diode I S *1 ISM *2 VSD *1 Min. -40 -1.8 -9 Typ. -2.3 11 38 50 11.5 2.5 3.2 7 10 20 12 1223 405 366 Max. -3.2 ±100 -1 -25 44 70 -9 -36 -1.3 Unit V V S nA μA μA A mΩ mΩ Test Conditions Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 3/11 VGS=0, ID=-250μA VDS =VGS, ID=-250μA VDS =-5V, ID=-8A VGS=±20, VDS=0 VDS =-32V, VGS =0 VDS =-30V, VGS =0, Tj=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-8A VGS =-7V, ID=-6A nC ID=-10A, VDS=-20V, VGS=-10V VDS=-10V, ID=-1A, VGS=-10V, RG=6Ω ns pF VGS=0V, VDS=-20V, f=1MHz A V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. Ordering Information Device MTC3504BJ4 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking 3504 MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves N-Channel Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 4/11 On-Region Characteristics 50 V = 10V GS 8.0V 7.0V On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 2.0 VGS = 3.5 V 5.0 V 40 6.0V RDS(ON) -Normalized Drain-S ource On-Resistance ID- Drain Current(A) 30 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 I D - Drain Current(A) 40 50 10 V 6.0 V 7.0 V 8.0 V 20 5.0V 4.0V 3.5V 10 0 0 1 3 2 V - Drain S ource Voltage(V) DS 4 5 On-Resistance Variation with Temperature 1.9 ID = 10A V = 10V GS 1.6 R (on) - Normalized DS Drain-S ource On-Resistance On-Resistance Variation with Gate-to-S ource Voltage 0.09 0.08 0.07 0.06 RDS(ON) - On-Resistance(Ω) 0.05 0.04 0.03 0.02 0.01 2 4 6 VGS- Gate-to-S ource Voltage(V) 8 10 TA = 25°C T = 125°C A ID = 10 A 1.3 1.0 0.7 0.4 -50 -25 0 25 50 75 TJ - Junction Temperature (°C) 100 125 150 Transfer Characteristics 30 VDS= 10V TA = -55° C 20 25° C 15 10 5 0 125° C 25 ID- Drain Current(A) 100 Body Diode Forward Voltage Variation with S ource Current and Temperature V GS= 0V Is - Reverse Drain Current(A) 10 T A= 125° C 1 25° C 0.1 -55° C 0.01 1 2 3 V - Gate-to-S ource Voltage(V) GS 4 5 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD- Body Diode Forward Voltage(V) 1.2 1.4 MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID = 10A 8 VGS - Gate S ource Voltage(V) Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 5/11 1200 Capacitance Characteristics f = 1MHz VGS = 0 V VDS = 15V 20V 900 Capacitance( pF ) Ciss 6 600 4 2 0 0 4 8 Q g - Gate Charge(nC) Maximum Safe Operating Area 300 Coss 0 Crss 0 10 20 VDS - Drain-S ource Voltage( V ) 30 40 12 16 80 50 RDS(ON) Limit 50 S ingle Pulse Maximum Power Dissipation Single Pulse R JC = 6°C/ W θ TC = 25°C 1ms I D - Drain Current(A) 10ms P(pk),Peak Transient Power(W) 100μs 40 30 10 DC VGS= 10V Single Pulse RθJC= 6°C/ W TC = 25°C 0 1 100ms 1s 10s 20 10 0 0.001 1 0 10 VDS - Drain-Source Voltage(V) 40 50 0.01 0.1 1 10 t 1 ,Time (sec) 100 1000 1 Duty Cycle = 0.5 Transient Thermal Response Curve r(t),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 Notes: PDM t1 t2 0.01 Single Pulse 1.Duty Cycle,D = 2.R JC =6°C/ W θ t1 t2 3.T - TC = P * R JC (t) θ J 4.R JC(t)=r(t) * R JC θ θ 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) P-Channel 50 On-R egion C haracteristics VGS = - 10.0V - 8.0V 2 Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 6/11 On-R esistance Variation with Drain C urrent and Gate Voltage 2.5 V = - 3.5 V GS 40 RDS(ON) -Normalized Drain-S ource On-Resistance - 7.0V -ID- Drain Current(A) 30 - 6.0V - 5.0 V - 6.0 V - 7.0 V 1.5 20 - 5.0V - 4.0V - 3.5V 0 0 1 2 3 -V - Drain-to-S ource Voltage(V) DS 4 5 - 8.0 V 1 - 10.0 V 10 0.5 0 10 20 30 - ID - Drain C urrent(A) 40 50 On-R esistance Variation with Temperature 1.9 ID = -9 A 1.6 RDS(on) - Normalized Drain-Source On-Resistance VGS = - 10V RDS(ON) - On-Resistance(Ω) 0.15 0.2 On-R esistance Variation with Gate-to-S ource Voltage ID = - 4.5A 1.3 0.1 TA = 125°C 0.05 TA = 25°C 0 1.0 0.7 0.4 -50 -25 75 0 25 50 TJ - J unction Temperature (°C ) 100 125 150 2 4 6 - VGS- Gate-to-S ource Voltage(V) 8 10 30 25 -ID - Drain Current( A ) 20 10 15 5 0 1.5 Transfer C haracteristics V = - 10V DS T = -55°C A 100 Body Diode Forward Voltage Variation with S ource C urrent and Temperature 10 25°C VGS = 0V -Is - Reverse Drain Current(A) 1 TA = 125°C 125°C 0.1 25°C -55°C 0.01 0.001 2.5 3.5 -V - G ate-S ource Voltage( V ) GS 4.5 5.5 0 0.2 0.6 0.4 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate C harge C haracteristics 10 ID = - 9A - VGS - Gate-to-S ource Voltage(V) 8 VDS = - 15V 6 Capacitance(pF) 1200 C iss 1500 Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 7/11 C apacitance C haracteristics f = 1 MHz VGS = 0 V - 20V 900 4 600 C oss 300 0 C rss 2 0 0 8 4 Qg - G C ate harge(nC ) 12 16 0 20 10 - V , Drain-S ource Voltage(V) DS 30 40 80 50 -ID - Drain Current(A) Maximum S Operating Area afe 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R JC= 6°C /W θ T = 25°C C 100μs 1ms 10ms P(pk),Peak Transient Power(W) RDS(ON) Limit 40 30 10 10s DC VGS= -10V S ingle Pulse RθJC = 6°C /W TC = 25°C 100ms 1s 20 10 0 1 0 0 1 10 -V - Drain-S ource Voltage(V) DS 40 50 0.001 0.01 0.1 t 1 ,Time (sec) 1 10 100 E ffective Transient Thermal Impedance 1 Duty C = 0.5 ycle Normalized Thermal Response(Rthjc) 0.2 0.1 0.1 0.05 0.02 0.01 Notes: P DM t1 t2 1.Duty C ycle,D = 2.R JC = 6°C /W θ t1 t2 S ingle Pulse 3.T - T = P* RJC(t) C J θ 4.R JC (t)=r(t) * RJC θ θ 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , Pulse Width(ms) MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 8/11 Carrier Tape Dimension MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Recommended soldering footprint Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 9/11 Unit : mm MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 10/11 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC3504BJ4 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Marking: Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 11/11 Tab Device Name Date code 3504 □□□□ Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 DIM A A1 B B1 B2 C D D2 D3 Inches Min. Max. 0.0826 0.0984 0.0433 0.0512 0.0118 0.0276 0.0217 0.0295 0.0157 0.0315 0.157 0.0236 0.2087 0.2244 0.2638 0.2874 0.0866 0.1181 Millimeters Min. Max. 2.10 2.50 1.10 1.30 0.30 0.70 0.55 0.75 0.40 0.80 0.40 0.60 5.30 5.70 6.70 7.30 2.20 3.00 DIM E E2 H L L1 L2 L3 P Inches Min. Max. 0.2480 0.2638 0.1890 0.2146 0.3622 0.3996 0.0512 0.0669 0.0354 0.0590 0.0197 0.0433 0.0000 0.0118 0.0461 0.0539 Millimeters Min. Max. 6.30 6.70 4.80 5.45 9.20 10.15 1.30 1.70 0.90 1.50 0.50 1.10 0.00 0.30 1.17 1.37 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC3504BJ4 CYStek Product Specification