MTC4501Q8

CYStech Electronics Corp. Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free package Applications • Power management in notebook computer, portable equipment and battery powered systems. Equivalent Circuit MTC4501Q8 Outline SOP-8 G：Gate S：Source D：Drain MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja Limits N-channel 30 ±20 7 5.8 20 Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 2/10 P-channel -30 ±16 -5.3 -4.7 -20 Unit V V A A A W W / °C °C °C °C/W (Note 1) (Note 1) 2 0.016 -55~+150 -55~+150 62.5 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. 30 1.0 Typ. 0.02 13 645 150 95 6 5.2 18.8 4.4 8.4 2.1 4.7 Max. 3.0 ±100 1 25 28 42 1.2 1.67 Unit V V/°C V nA μA μA mΩ S Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=70°C ID=7A, VGS=10V ID=5A, VGS=4.5V VDS=10V, ID=7A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS MTC4501Q8 pF VDS=25V, VGS=0, f=1MHz VDS=15V, ID=1A, VGS=10V, RG=3.3Ω, RD=15Ω ns nC VDS=24V, ID=7A, VGS=4.5V V A VGS=0V, IS=7A VD=VG=0V, VS=1.2V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. -30 -1.0 Typ. -0.028 8.5 790 440 120 12 20 45 27 20 3.5 2 Max. -3.0 ±100 -1 -25 50 90 -1.2 -1.67 Unit V V/°C V nA μA μA mΩ S Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 3/10 P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Test Conditions VGS=0, ID=-250μA Reference to 25°C, ID=-1mA VDS=VGS, ID=-250μA VGS=±16V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0, Tj=70°C ID=-5.3A, VGS=-10V ID=-4.2A, VGS=-4.5V VDS=-10V, ID=-5.3A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS - pF ns ns ns ns nC nC nC V A VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω, RD=15Ω VDS=-15V, ID=-5.3A, VGS=-10V VGS=0V, IS=-2.6A VD=VG=0V, VS=-1.2V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 4/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 5/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 6/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 7/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves(Cont.) Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 8/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves(Cont.) Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 9/10 MTC4501Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 10/10 Marking: I B C H Device Name Date Code 4501SS □□□□ J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC4501Q8 CYStek Product Specification