MTN0401LA3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 1/4 MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Equivalent Circuit MTN0401LA3 Outline TO-92 G：Gate S：Source D：Drain SGD Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage--Continuous Gate-Source Voltage-- Non-repetitive(tp≤50µs) Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Derate Above 25°C Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Lead Temperature, for 10 second Soldering Note : Pulse Width ≤ 300µs, Duty cycle ≤2% Symbol VDS VGS VGS ID ID IDM PD TJ Tstg Rth , ja TL Limits 60 ±20 ±40 640 380 3 (Note) 800 3.2 -55~+150 -55~+150 156 260 Unit V V V mA mA A mW mW/°C °C °C °C/W °C MTN0401LA3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS *ID(ON) *ID(ON) *RDS(ON) *GFS Ciss Coss Crss Min. 60 0.5 250 640 150 Typ. Max. 2.5 10 -10 1 5 5 3 60 50 15 Unit V V nA nA µA mA mA Ω mS pF Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 2/4 Test Conditions VGS=0V, ID=10µA VDS=VGS, ID=0.25mA VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=48V, VGS=0V VDS=10V, VGS=4.5V VDS=10V, VGS=10V ID=50mA, VGS=3.5V ID=75mA, VGS=4.5V ID=1A, VGS=10V VDS=10V, ID=200mA VDS=15V, VGS=0V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves T YPICAL OUTPUT CHARACTERISICS 1.4 1.2 DRAIN CURRENT---ID(A) 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 DRAIN-SOURCE ---VDS(V) VGS=4V VGS=8V DRAIN CURRENT---ID(A) T YTICAL TRANSFER CHARACTERISTIC 1.4 1.2 VGS=5V 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 GAT E-SOURCE VOLT AGE---VGS(V) MTN0401LA3 CYStek Product Specification CYStech Electronics Corp. ST AT IC DRAIN-SOURCE ON-ST AT E RESIST ANCE vs DRAIN CURRENT 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE--- RDS(on)(ohm) Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 3/4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE 10 STATIC DRAIN-SOURCE ON-STATE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN CURRENT ---ID(A) VGS=10V VGS=5V 9 RESISTANCE--- RDS(on)(ohm) 8 7 6 5 4 3 2 1 0 0 5 10 15 20 GAT E-SOURCE VOLT AGE---VGS(V) ID=57.5m A ID=115mA F ORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT 1000 FORWARD TRANSFER ADMITTANCE--GFS(ms) REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE 1.00 VGS=10V 100 REVERSE DRAIN CURRENT---IDR(A) Pulsed 0.10 VGS=10V VGS=0V 10 1 0.001 0.01 0.1 1 0.01 0.00 0.50 1.00 1.50 DRAIN CURRENT ---ID(A) SWIT CHING 1000 POWER DISSIPATION---PD(W) SOURCE-DRAIN VOLT AGE---VSD(V) CHARACT ERIST ICS 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 POWER DERATING CURVE SWITCHING TIMES---(ns) 100 T d(off) Tf T d(on) 10 Tr 1 0.001 0.01 0.1 1 0 50 100 150 200 DRAIN CURRENT ---ID(A) AMBIENT TEMPERATURE---Ta(℃) MTN0401LA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension α2 Spec. No. : C324A3 Issued Date : 2003.07.24 Revised Date : 2004.02.13 Page No. : 4/4 A B 1 2 3 Marking: 0401L α3 C D H I E F G Style: Pin 1.Source 2.Gate 3.Drain 3-Lead TO-92 Plastic Package CYStek Package Code: A3 α1 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN0401LA3 CYStek Product Specification