MTN10N60E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 MTN10N60E3 Description BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Adaptor • LCD Panel Power • TV Main Power • SMPS Standby Power Symbol MTN10N60E3 Outline TO-220 G：Gate D：Drain S：Source GDS MTN10N60E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9 Limits Unit Drain-Source Voltage (Note 1) VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 10 ID 6 Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) IDM 40 Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V EAS 484 Repetitive Avalanche Energy EAR 21.6 Peak Diode Recovery dv/dt (Note 3) dv/dt 3.0 Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) 300 TL from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 TPKG 260 seconds Pd Total Power Dissipation (TC=25℃) 216 1.72 Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg -55~+150 Note : *1. TJ=+25℃ to +150℃. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt