MTN1308E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 1/6 MTN1308E3 Description BVDSS RDSON ID 75V 13 mΩ 80A The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol MTN1308E3 Outline TO-220 G：Gate D：Drain S：Source GDS MTN1308E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=40 A, RG=25Ω Repetitive Avalanche Energy @ L=0.1mH (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1.Pulse width limited by maximum junction temperature. *2. Duty ≤ 1% VDS VGS ID ID IDM IAS EAS EAR TL TPKG Pd 75 ±30 80 55 200 40 400 80 300 260 V V A A A A mJ °C °C W W/°C °C 230 1.87 Tj, Tstg -55~+175 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.65 62.5 Unit °C/W °C/W MTN1308E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. 2.5 10.5 38 42 19 17 25 200 100 120 10587 340 242 2 120 380 Max. 4.0 ±100 1 25 13 80 200 1.3 Unit V V nA μA μA A mΩ S nC Test Conditions Static BVDSS 75 VGS(th) 1.5 IGSS IDSS IDSS IDON 80 RDS(ON) GFS Dynamic Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Rg Source-Drain Diode IS ISM VSD trr Qrr - Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 3/6 VGS=0, ID=250μA VDS = VGS, ID=250μA VGS=±30 VDS =60V, VGS =0 VDS =50V, VGS =0, Tj=125°C VDS =10V, VGS=10V (Note 1) VGS =10V, ID=30A (Note 1) VDS =5V, ID=30A (Note 1) VDS=80V, ID=30A, VGS=10V (Note 1 & 2) ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω (Note 1 & 2) VGS=0V, VDS=25V, f=1MHz VGS=15mV, VDS=0V, f=1MHz pF Ω A V ns nC (Note 3) IS=80A, VGS=0V (Note 1) VGS=0, IF=25A, dIF/dt=100A/μs Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. Ordering Information Device MTN1308E3 Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 13N08 MTN1308E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 4/6 MTN1308E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 5/6 MTN1308E3 CYStek Product Specification CYStech Electronics Corp. TO-220 Dimension Marking: E C Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 6/6 A D B H I G 4 P M 3 2 1 N K Device Name 13N08 □□□□ Date Code O 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical DIM A B C D E G H Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN1308E3 CYStek Product Specification