MTN13N50E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 MTN13N50E3 Description BVDSS : 500V RDS(ON) : 0.48Ω ID : 13A The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol MTN13N50E3 Outline TO-220 G：Gate D：Drain S：Source GDS MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage (Note 1) VDS Gate-Source Voltage VGS Continuous Drain Current ID ID Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) IDM Single Pulse Avalanche Energy @ L=7.2mH, ID=12.2 Amps EAS Avalanche Current (Note 2) IAR Peak Diode Recovery dv/dt (Note 3) dv/dt Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) TL from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 TPKG seconds Pd Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg Note : *1. TJ=+25℃ to +150℃. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt