CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8
MTN1N65I3
Description
BVDSS : 700V @Tj=150℃ RDS(ON) : 9.5Ω ID : 1.0A
The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=700V typically @ Tj=150℃ • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Cell phone charger • Standby power
Symbol
MTN1N65I3
Outline
TO-251
G：Gate D：Drain S：Source
G B
DS C
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter Symbol
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 2/8
Limits
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.0A, VDD=50V, L=80mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤1.0A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg
650 ±30 1.0 0.6 4.0 43 1.0 2.8 4.5 300 1.5 28 0.2 -55~+150
V V A A A mJ A mJ V/ns °C W W W/°C °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.46 83.3 Unit °C/W °C/W
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (TC=25°C, unless otherwise specified)
Symbol Static BVDSS BVDSS ∆BVDSS/∆Tj BVDS VGS(th) *GFS IGSS IDSS 650 2.0 700 0.5 700 5 4.5 0.9 1.3 22.5 27 11.5 27 150 20 4.3 160 0.59 4.0 ±100 1 10 9.5 6.7 1.3 1.9 225 30 6.4 1.5 1.0 4.0 V V V/°C V V S nA μA μA Ω Min. Typ. Max. Unit Test Conditions
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 3/8
*RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr -
VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=1.0A VDS = VGS, ID=250μA VDS =15V, ID=0.5A VGS=±30 VDS =650V, VGS =0 VDS =520V, VGS =0, TC=125°C VGS =10V, ID=0.5A
nC
ID=1A, VDD=300V, VGS=10V VDD=300V, ID=1A, VGS=10V, RG=25Ω, RD=300Ω
ns
pF
VGS=0V, VDS=25V, f=1MHz
V A ns μC
IS=1.0A, VGS=0V
VGS=0, IF=1A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTN1N65I3 Package TO-251 (RoHS compliant) Shipping 50 pcs / tube, 80 tubes / box Marking 1N65
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 4/8
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 5/8
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 6/8
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms(Cont.)
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 7/8
MTN1N65I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
Marking:
A B C D F 3 I E K 2 1 J H G
Product Name Date Code
Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 8/8
1N65
□□ □□
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0472 0.0346 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 1.20 0.88 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN1N65I3
CYStek Product Specification
