MTN2310M3

CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 1/6 MTN2310M3 Features • VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310M3 Outline SOT-89 G：Gate S：Source D：Drain DG D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction Temperature Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board, t≤10sec. MTN2310M3 Symbol VDS VGS ID IDM PD Tj Tstg Limits 60 ±20 3.0 2.3 10 1.5 0.01 -55~+150 -55~+150 Unit V V A A A W W/°C °C °C CYStek Product Specification CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Note : Surface mounted on FR-4 board, t≦10sec. Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 2/6 Symbol Rth,ja Limit 83.3 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD Trr Qrr Min. 60 1.0 Typ. 0.05 5 490 55 40 6 5 16 3 6 1.6 3 25 26 Max. 3.0 ±100 10 25 90 120 780 10 1.2 Unit V V/°C V nA μA μA mΩ S Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 VDS=48V, VGS=0 (Tj=70°C) ID=3A, VGS=10V ID=2A, VGS=4.5V VDS=5V, ID=3A pF VDS=25V, VGS=0, f=1MHz VDS=30V, ID=1A, RD=30Ω VGS=10V, RG=3.3Ω VDS=48V, ID=3A, VGS=4.5V, VGS=0V, IS=1.2A VGS=0V, IS=3A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% ns nC V ns nC MTN2310M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 3/6 MTN2310M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 4/6 MTN2310M3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 5/6 Carrier Tape Dimension MTN2310M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C393M3 Issued Date : 2007.05.28 Revised Date : Page No. : 6/6 Marking: 1 2 C 3 2310 H B D Style: Pin 1. Gate 2. Drain 3. Source E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2310M3 CYStek Product Specification