MTN2310N3

MTN2310N3

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    MTN2310N3 - 60V N-CHANNEL Enhancement Mode MOSFET - Cystech Electonics Corp.

  • 详情介绍
  • 数据手册
  • 价格&库存
MTN2310N3 数据手册
CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 1/6 MTN2310N3 Features • VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A • Simple drive requirement • Small package outline Symbol MTN2310N3 Outline SOT-23 D G G:Gate S:Source D:Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD Tj Tstg Limits 60 ±20 3.0 2.3 10 1.38 0.01 -55~+150 -55~+150 Unit V V A A A W W/°C °C °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad MTN2310N3 CYStek Product Specification CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 2/6 Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD Trr Qrr Min. 60 1.0 Typ. 0.05 5 490 55 40 6 5 16 3 6 1.6 3 25 26 Max. 3.0 ±100 10 25 90 120 780 10 1.2 Unit V V/°C V nA μA μA mΩ S Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 VDS=48V, VGS=0 (Tj=70°C) ID=3A, VGS=10V ID=2A, VGS=4.5V VDS=5V, ID=3A pF VDS=25V, VGS=0, f=1MHz VDS=30V, ID=1A, RD=30Ω VGS=10V, RG=3.3Ω VDS=48V, ID=3A, VGS=4.5V ns nC V ns nC VGS=0V, IS=1.2A VGS=0V, IS=3A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN2310N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 3/6 MTN2310N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 4/6 MTN2310N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 5/6 Carrier Tape Dimension MTN2310N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 6/6 A L Marking: 3 B 1 2 S 2TE 310 V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2310N3 CYStek Product Specification
MTN2310N3
1. 物料型号:MTN2310N3,这是一个60V N-CHANNEL增强型MOSFET。

2. 器件简介:MTN2310N3是CYStech Electronics Corp.生产的一款60V N-CHANNEL增强型MOSFET,具有较低的导通电阻和简单的驱动需求,封装为SOT-23。

3. 引脚分配:G(栅极),S(源极),D(漏极)。

4. 参数特性: - 漏源电压(VDS):60V - 栅源电压(VGS):±20V - 连续漏极电流@VGs=4.5V, TA=25°C:3.0A - 脉冲漏极电流:10A - 最大功耗@ TA=25°C:1.38W - 工作结温:-55~+150℃ - 存储温度:-55~+150℃C

5. 功能详解: - 该器件为N-CHANNEL MOSFET,具有60V的漏源电压耐受能力,适用于需要高耐压和低导通电阻的应用场景。 - 静态和动态电气特性,包括阈值电压、导通电阻、电容等参数,适用于开关和功率放大等应用。

6. 应用信息:适用于需要高耐压和低导通电阻的开关应用,如电源管理、电机控制等。

7. 封装信息:SOT-23封装,具体尺寸和引脚定义已在文档中详细说明。
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