MTN351AN3

CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C410N3 Issued Date : 2007.06.28 Revised Date : Page No. : 1/5 MTN351AN3 Features • VDS=30V RDS(ON)=60mΩ@VGS=10V, ID=3A RDS(ON)=100mΩ@VGS=4.5V, ID=2A • Lower gate charge • Compact and low profile SOT-23 package Equivalent Circuit MTN351AN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Rth, j-a Tj, Tstg Limits 30 ±20 3 (Note 1) 10 (Note 2 & 3) 1.38 0.01 90 (Note 1) -55 ~ +150 Unit V V A A W W/°C °C/W °C Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad 2. Pulse width limited by maximum junction temperature 3. Pulse width≤300μs, duty cycle≤2% MTN351AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C410N3 Issued Date : 2007.06.28 Revised Date : Page No. : 2/5 Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Source-Drain Diode *VSD *trr *Qrr Min. 30 1.0 Typ. 0.1 13 660 90 70 6 20 20 3 8.5 1.5 3.2 0.9 14 7 Max. 2.5 ±100 1 10 60 100 1.2 Unit V V/°C V nA μA μA mΩ S Test Conditions VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=55°C ID=3A, VGS=10V ID=2A, VGS=4.5V VDS=5V, ID=3A pF VDS=25V, VGS=0, f=1MHz VDS=15V, ID=3A, RD=3Ω VGS=10V, RG=3.3Ω VDS=16V, ID=3A, VGS=4.5V VGS=15mV, f=1MHz VGS=0V, IS=1.2A IS=3A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% ns nC Ω V ns nC Ordering Information Device MTN351AN3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 351AN MTN351AN3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C410N3 Issued Date : 2007.06.28 Revised Date : Page No. : 3/5 MTN351AN3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C410N3 Issued Date : 2007.06.28 Revised Date : Page No. : 4/5 MTN351AN3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C410N3 Issued Date : 2007.06.28 Revised Date : Page No. : 5/5 A L Marking: 3 B 1 2 S TE 351AN V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN351AN3 CYStek Product Specification