MTN50N06E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 1/8 MTN50N06E3 Description BVDSS 60V RDSON(MAX) 22 mΩ ID 50A The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol MTN50N06E3 Outline TO-220 G：Gate D：Drain S：Source GDS MTN50N06E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C445E3 Issued Date : 2009.05.12 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dV/dt (Note 3) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Note : *1. Pulse width limited by maximum junction temperature. *2. L=200μH, IAS=50A,VDD=30V, starting TJ=+25℃ *3. ISD≤50A, dI/dt