MTN5N45E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C719E3 Issued Date : 2009.06.05 Revised Date : Page No. : 1/8 MTN5N45E3 Description BVDSS : 450V RDS(ON) : 1.6Ω ID : 4.5A The MTN5N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=500V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • Flat Panel Power • Full and Half Bridge Power Supplies • Two-Transistor Forward Power Supplies Symbol MTN5N45E3 Outline TO-220 G：Gate D：Drain S：Source GDS CYStek Product Specification MTN5N45E3 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C719E3 Issued Date : 2009.06.05 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=4.5A, dI/dt