MTN7000ZHA3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 1/7 MTN7000ZHA3 Description The MTN7000ZHA3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol MTN7000ZHA3 D Outline TO-92 G S G：Gate S：Source D：Drain SGD MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 2/7 Symbol VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 115 700 115 700 400 +150 -55~+150 *1 *1 *1 Unit V V mA mA mA mA mW °C °C Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 7.32 Coss 3.42 Crss 7.63 - Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10V, ID=100mA VDS=10V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device MTN7000ZHA3 Package TO-92 (Pb-free) Shipping 2000 pcs / Tape & Box Marking 7000 MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics 0.3 4V 0.25 Drain Current - ID(A) 0.2 0.15 0.1 0.05 VGS=2.2V 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4 3V 6V 3.5V Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 3/7 Typical Transfer Characteristics 0.3 0.25 Drain Current -ID(A) 0.2 0.15 0.1 0.05 0 0 1 2 3 Gate-Source Voltage-VGS(V) 4 VDS=10V Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V 1 0.01 0.1 Drain Current-ID(A) 1 1 0.01 0.1 Drain Current-ID(A) 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage R everse Drain Current vs Source-Drain Voltage 10 Source-Drain Voltage-VSD(V) 7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25 ID=50mA ID=100mA 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 Power Dissipation---PD(mW) 450 400 350 300 250 200 150 100 50 0 Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 4/7 Power Derating Curve Capacitance---(pF) 10 Crss Ciss C oss 1 0.1 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Taping Outline H2 H2 H2A H2A A D2 Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 5/7 H3 L H4 H L1 H1 F1 F2 D1 D W1 W T2 T T1 P1 P P2 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Marking: Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 6/7 A B 1 2 3 α2 Product Name N7000Z □□ Date Code: Year+Month α3 Year: 4→2004, 5→2005 Month: 1→1, 2→2, ‧‧‧, 9→9, A→10, B→11, C→12 C D H I E F G α1 Style: Pin 1.Source 2.Gate 3.Drain 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 * 0.1000 * 0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds MTN7002ZHA3 CYStek Product Specification CYStech Electronics Corp. Recommended temperature profile for IR reflow Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 7/7 Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7002ZHA3 CYStek Product Specification