MTN7002N3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol MTN7002N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source Voltage Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering *2. Pulse Width ≤ 300µs, Duty cycle ≤2% MTN7002N3 CYStek Product Specification Symbol BVDSS BVDGR VGS ID ID IDM PD Tj Tstg Rth,ja Rth,jc TL Limits 60 60 ±40 200 115 800 200 500 -55~+150 -55~+150 625 250 240 *1 *1 *2 Unit V V V mA mA mA mW °C °C °C/W °C/W °C Note : *1. The power dissipation of the package may result in a continuous drain current CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) VDS(ON) RDS(ON) GFS Ciss Coss Crss Min. 60 1 500 80 Typ. Max. 2.5 100 -100 1 0.375 3.75 7.5 7.5 50 25 5 Unit V V nA nA µA mA V V Ω mS pF Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 2/4 Test Conditions VGS=0, ID=10µA VDS=2.5V, ID=0.25mA VGS=+20V, VDS=0 VGS=-20V, VDS=0 VDS=60V, VGS=0 VDS>2VDS(ON), VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V VDS>2VDS(ON), ID=200mA VDS=25V, VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves T YPICAL OUTPUT CHARACTERISICS 1.4 1.2 DRAIN CURRENT---ID(A) 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 DRAIN-SOURCE ---VDS(V) VGS=4V VGS=8V DRAIN CURRENT---ID(A) T YTICAL TRANSFER CHARACTERISTIC 1.4 1.2 VGS=5V 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 GAT E-SOURCE VOLT AGE---VGS(V) MTN7002N3 CYStek Product Specification CYStech Electronics Corp. ST AT IC DRAIN-SOURCE ON-ST AT E RESIST ANCE vs DRAIN CURRENT 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE--- RDS(on)(ohm) Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 3/4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE 10 STATIC DRAIN-SOURCE ON-STATE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN CURRENT ---ID(A) VGS=10 V VGS=5V 9 RESISTANCE--- RDS(on)(ohm) 8 7 6 5 4 3 2 1 0 0 5 10 15 20 GAT E-SOURCE VOLT AGE---VGS(V) ID=57.5m A ID=115mA FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT 1000 FORWARD TRANSFER ADMITTANCE--GFS(ms) REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE 1.00 VGS=10V 100 REVERSE DRAIN CURRENT---IDR(A) Pulse d 0.10 VGS=10V VGS=0V 10 1 0.001 0.01 0.1 1 0.01 0.00 0.50 1.00 1.50 DRAIN CURRENT ---ID(A) SWIT CHING 1000 CHARACT ERIST ICS SOURCE-DRAIN VOLT AGE---VSD(V) Power Derating Curve 0.25 Power Dissipation---PD(W) 0.1 1 Tf SWITCHING TIMES---(ns) 0.2 0.15 0.1 0.05 0 100 T d(off) T d(on) 10 Tr 1 0.001 0.01 0 50 100 150 200 DRAIN CURRENT ---ID(A) Ambient Temperature---Ta(℃) MTN7002N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 4/4 A L 3 B 1 2 S Marking: TE 702 V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7002N3 CYStek Product Specification