CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 1/7
MTN7002ZS3
Description
The MTN7002ZS3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance • High ESD • High speed switching • Low-voltage drive(3V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package
Symbol
MTN7002ZS3 D
Outline
SOT-323 D
G G S
S
G:Gate S:Source D:Drain
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 2/7
Symbol VDSS
VGSS ID IDP IDR IDRP PD TCH Tstg
Limits 60 ±20 300 700 *1 300 700 *1 200 *2 2000 *3 +150 -55~+150
Unit V V mA mA mA mA mW V °C °C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 2.4 5.0 RDS(ON)* 1.8 2.3 1.25 1.7 GFS 200 Ciss 50 Coss 14 Crss 22 -
Unit V V μA μA Ω mS pF
Test Conditions VGS=0, ID=10μA VDS=10V, ID=1mA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=150mA, VGS=3V ID=300mA, VGS=4V ID=300mA, VGS=10V VDS=10V, ID=300mA VDS=10V, VGS=0, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device MTN7002ZS3 Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 72
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
1.2 1 Drain Current - ID(A) 0.8 0.6 0.4
3V 6V 4V
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 3/7
Typical Transfer Characteristics
0.7 0.6 Drain Current -ID(A) 0.5 0.4 0.3 0.2 0.1
VGS=2.2V VDS=10V
3.5V
0.2 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4
0 0 1 2 3 Gate-Source Voltage-VGS(V) 4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10 Static Drain-Source On-State Resistance-RDS(on)(Ω)
10 Static Drain-Source On-State Resistance-RDS(on)(Ω)
VGS=4V
1
1
VGS=4V
VGS=10V
0.1 0.01 0.1 Drain Current-ID(A) 1
0.1 0.01 0.1 Drain Current-ID(A) 1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
Reverse Drain Current vs Source-Drain Voltage 10 Reverse Drain Current -IDR(A)
7 Static Drain-Source On-State Resistance-RDS(ON)(Ω) 6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25
150mA ID=300mA
1
0.1
0.01
VGS=0V
0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
R everse Drain Current vs Source-Drain Voltage
10
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 4/7
Power Derating Curve 250
Reverse Drain Current -IDR(A)
1
VGS=0V
Power Dissipation---PD(mW)
200 150 100 50 0
0.1
VGS=10V
0.01
0.001
0
0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V)
1
0
50 100 150 Ambient Temperature---TA(℃)
200
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 5/7
Carrier Tape Dimension
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 °C
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 6/7
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature
Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max.
Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7002ZS3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C403S3 Issued Date : 2007.10.17 Revised Date : 2008.10.03 Page No. : 7/7
3
A
Marking:
A1 Q Lp
detail Z W B
C
1 e1 e D bp
2
TE 72
E
A
Z
θ
He
0 1 scale 2 mm
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
v A
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
DIM A A1 bp C D E e
Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 -
Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 -
DIM e1 He Lp Q v w θ
Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 -
Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZS3
CYStek Product Specification
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