CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 1/9
MTN7N65FP
Description
BVDSS : 700V @Tj=150℃ RDS(ON) : 1.5Ω I D : 7A
The MTN7N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• BVDSS=700V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
Applications
• Open Framed Power Supply • Adapter • STB
Symbol
MTN7N65FP
Outline
TO-220FP
G:Gate D:Drain S:Source
GDS
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter Symbol
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 2/9
Limits
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=7A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤7A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
VDS VGS ID ID IDM EAS IAR EAR dv/dt TL TPKG
650 ±30 7* 4.2* 28* 212 7 1.6 4.5 300 260 52 0.42 -55~+150
V V A A A mJ A mJ V/ns °C °C W W/°C °C
Tj, Tstg
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.4 62.5 Unit °C/W °C/W
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (TC=25°C, unless otherwise specified)
Symbol Static BVDSS 650 BVDSS ∆BVDSS/∆Tj BVDS VGS(th) 2.0 *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr 700 0.8 700 5 28 4.5 12 20 50 90 55 955 100 12 400 3.3 4.0 ±100 10 1.5 36 50 110 190 120 1245 130 16 1.5 7 28 V V V/°C V V S nA μA Ω Min. Typ. Max. Unit Test Conditions
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 3/9
VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=7A VDS = VGS, ID=250μA VDS =15V, ID=3A VGS=±30 VDS =650V, VGS =0 VGS =10V, ID=3.6A
nC
ID=7A, VDD=520V, VGS=10V VDD=325V, ID=7A, VGS=10V, RG=25Ω, RD=46Ω
ns
pF
VGS=0V, VDS=25V, f=1MHz
V A ns μC
IS=7A, VGS=0V
VGS=0, IF=7A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTN7N65FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 7N65
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 4/9
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 5/9
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 6/9
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 7/9
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
Test Circuits and Waveforms(Cont.)
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 8/9
MTN7N65FP
CYStek Product Specification
CYStech Electronics Corp.
TO-220FP Dimension
Marking:
Spec. No. : C436FP-A Issued Date : 2009.05.19 Revised Date : Page No. : 9/9
Device Name
7N65
□□□□ Date Code
Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220FP Plastic Package CYStek Package Code: FP
DIM A A1 A2 A3 b b1 b2 c
Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030
Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750
DIM D E e F Φ L L1 L2
Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083
Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7N65FP
CYStek Product Specification