MTP1403BQ8

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 1/6 MTP1403BQ8 Description BVDSS ID RDSON(max) -30V -12A 14mΩ The MTP1403BQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=14mΩ@VGS=-10V, ID=-12A RDS(ON)=21mΩ@VGS=-5V, ID=-9A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTP1403BQ8 Outline SOP-8 G：Gate S：Source D：Drain MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TC=25 °C Continuous Drain Current @TC=100 °C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω TA=25 °C Power Dissipation TA=100 °C Operating Junction and Storage Temperature Range Note : 1.Pulse width limited by maximum junction temperature. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 2/6 Symbol BVDSS VGS ID ID IDM IAS EAS PD Tj ; Tstg Limits -30 ±25 -12 -9 -48 -20 20 3 1.5 -55~+175 Unit V V A A A A mJ W W °C Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Static BVDSS VGS(th) IGSS IDSS IDSS ID(ON) RDS(ON) GFS Dynamic Ciss Coss Crss td(ON) (Note 1&2) tr (Note 1&2) td(OFF) (Note 1&2) tf (Note 1&2) Qg(VGS=10V) (Note 1&2) Qg(VGS=5V) (Note 1&2) Qgs (Note 1&2) Qgd (Note 1&2) 6375 1612 1481 26 22 75 15 56 40 15 18 pF -30 -1 -12 -1.5 12 17 28 -3 ±100 -1 -10 14 21 V V nA μA μA A mΩ S Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0 VDS=-24V, VGS=0 VDS=-20V, VGS=0, Tj=125°C VDS=-5V, VGS=-10V ID=-12A, VGS=-10V ID=-9A, VGS=-5V VDS=-5V, ID=-12A (Note 1) (Note 1) (Note 1) VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=2.7Ω ns nC VDS=-15V, ID=-10A, VGS=-10V, MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 3/6 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr Typ. 52 60 Max. -3.6 -14.4 -1.2 Unit A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Test Conditions Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RθJC RθJA Typical Maximum 25 50 Unit °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves On-Region Characteristics 50 VGS= - 10V 40 - 6.0V - 4.5V 2.2 2.4 VGS = - 3.5 V Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 4/6 On-Resistance Variation with Drain Current and Gate Voltage - 4.0V RDS(ON) -Normalized Drain-S ource On-Resistance 2.0 1.8 1.6 1.4 1.2 -7V 1 0.8 0 10 20 30 - I D - Drain Current(A) 40 50 - 10 V - 4.0 V - 4.5 V -5V -6V -ID- Drain Current(A) 30 - 3.5V 20 - 3.0V 10 0 0 1 2 3 -VDS- Drain-to-S ource Voltage(V) 1.6 On-Resistance Variation with Temperature I D= - 12 A VGS = - 10V On-Resistance Variation with Gate-to-S ource Voltage 0.06 ID = - 6 A 0.05 RDS(ON) - On-Resistance(Ω) 0.04 0.03 0.02 0.01 TA = 25° C TA = 125° C 1.4 RDS(on) - Normalized Drain-S ource On-Resistance 1.2 1.0 0.8 0.6 -50 -25 75 100 0 25 50 TJ - Junction Temperature (° C) 125 150 175 0 2 4 6 - VGS- Gate-to-S ource Voltage(V) 8 10 Transfer Characteristics 40 VDS = - 5V Body Diode Forward Voltage Variation with S ource Current and Temperature 100 - 55° C 25° C 10 -Is - Reverse Drain Current(A) VGS = 0V 30 1 TA = 125° C 25°C -55°C -I D - Drain Current(A) 20 TA = 125°C 0.1 0.01 10 0.001 0 1.5 2 2.5 3 -VGS - Gate-to-Source Voltage(V) 3.5 4 0.0001 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics 10 ID = - 12A - VGS - Gate-to-S ource Voltage(V) 8 VDS = - 5V - 15V C iss 7500 Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 5/6 C apacitance C haracteristics f = 1 MHz V =0 V GS - 10V 6000 Capacitance(pF) 6 4500 4 3000 C oss 1500 C rss 2 0 0 15 30 Qg - Gate Charge(nC) 45 60 75 0 0 15 5 10 - VDS, Drain-to-S ource Voltage(V) 20 25 30 Maximum S Operating Area afe 100 RDS(ON) Limit 10 -Is , Drain Current(A) 100μs 40 P(pk),Peak Transient Power(W) 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R JA= 125° C/ W θ TA = 25° C 1ms 10ms 100ms 1s 10s DC 30 1 20 0.1 0.01 0.1 VGS = - 10 V S ingle Pulse R JA = 125°C / W θ TA = 25°C 1 10 -VSD , Drain - S ource Voltage(V) 100 10 0 0.001 0.01 0.1 1 t 1 ,Time (sec) 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 r(t),Normalized Effective Transient Thermal Resistance 0.2 0.1 0.1 0.05 Notes: 0.02 0.01 PDM t1 t2 0.01 1.Duty Cycle,D = 2.RθJA =125°C/ W t1 t2 S ingle Pulse 3.TJ - TA = P * R JA (t) θ 4.R JA(t)=r(t) + R JA θ θ 0.001 10 -4 10 -3 10 -2 10 t ,Time (sec) -1 1 10 100 1000 MTP1403BQ8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 6/6 Marking: I Date Code 1403 □□□□ B C H J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP1403BQ8 CYStek Product Specification