MTP2303N3

CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 1/8 MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • VDS=-30V RDS(ON)=240mΩ@VGS=-10V, IDS=-1.7A • Advanced trench process technology • Super high dense cell design for extremely low on resistance • Reliable and rugged • Compact and low profile SOT-23 package • Pb-free package Applications • Power management in Notebook Computer • Portable equipment • Battery powered system Equivalent Circuit MTP2303N3 Outline SOT-23 D G：Gate S：Source D：Drain G S MTP2303N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C (Note 1) Continuous Drain Current @TA=70°C (Note 1) Pulsed Drain Current (Note 2) Maximum Power Dissipation (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD Tj, Tstg Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 2/8 Limits -30 ±20 -1.9 -1.5 -10 1.38 0.01 -55~+150 Unit V V A A A W W/°C °C Note : 1. Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% 2. Pulse width limited by maximum junction temperature. 3. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd MTP2303N3 Min. -30 -1.0 - Typ. -0.1 2 230 130.4 40 7.6 8.2 17.5 9 6.2 1.4 0.3 Max. ±100 -1 -10 240 460 - Unit V V/°C V nA µA µA mΩ S Test Conditions VGS=0, ID=-250µA Reference to 25°C , ID=-1mA VDS=VGS, ID=-250µA VGS=±20V, VDS=0 VDS=-30V, VGS=0 VDS=-30V, VGS=0, Tj=70°C ID=-1.7A, VGS=-10V ID=-1.3A, VGS=-4.5V VDS=-10V, ID=-1.7A pF VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω, RD=15Ω VDS=-15V, ID=-1.7A, VGS=-10V CYStek Product Specification ns nC CYStech Electronics Corp. Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 3/8 Electrical Characteristics (Tj=25°C, unless otherwise specified) ---Cont. Source-Drain Diode *VSD *ISD *ISM -1.2 -1 -10 V A A VGS=0V, ISD=-1.25A, Tj=25°C VD=VG=0, VS=-1.2V *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Ordering Information Device MTP2303N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 2303 Moisture Sensitivity Level : conform to JEDEC level 3 Recommended Storage Condition: Temperature : 10~ 35 °C Humidity : 30~ 60% RH Characteristic Curves MTP2303N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 4/8 MTP2303N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 5/8 MTP2303N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 6/8 Carrier Tape Dimension MTP2303N3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 7/8 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Note : All temperatures refer to topside of the package, measured on the package body surface. Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. MTP2303N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 8/8 A L 3 B 1 2 S Marking: TE 2303 V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2303N3 CYStek Product Specification