MTP3401N3

CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 1/8 MTP3401N3 Features • VDS=-30V RDS(ON)=65mΩ@VGS=-4.5V, IDS=-4A RDS(ON)=120mΩ@VGS=-2.5V, IDS=-1A • Advanced trench process technology • High density cell design for ultra low on resistance • Low gate charge • Compact and low profile SOT-23 package • Pb-free & Halogen-free package Equivalent Circuit MTP3401N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C (Note 1) Continuous Drain Current @TA=70°C (Note 1) Pulsed Drain Current (Note 2) Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Tj, Tstg Limits -30 ±12 -4.2 -3.5 -30 1.38 0.01 -55~+150 Unit V V A A A W W/°C °C Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 2/8 Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) Min. -30 -0.7 Typ. 11 954 115 77 6.3 3.2 38.2 12 9.4 2 3 6 20.2 11.2 Max. -1.3 ±100 -1 -5 60 65 120 -2.2 -1.0 Unit V V nA µA µA mΩ S Test Conditions VGS=0, ID=-250µA VDS=VGS, ID=-250µA VGS=±12V, VDS=0 VDS=-24V, VGS=0 VDS=-24V, VGS=0, Tj=55°C ID=-4.2A, VGS=-10V ID=-4.0A, VGS=-4.5V ID=-1.0A, VGS=-2.5V VDS=-5V, ID=-5A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Rg Source-Drain Diode *ISD *VSD *trr *Qrr - pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, VGS=-10V, RL=3.6Ω, RG=6Ω nC Ω A V ns nC VDS=-15V, ID=-4A, VGS=-4.5V, f=1.0MHz VD=VG=0, VS=-1.0V VGS=0V, ISD=-1.0A IS=-4A, VGS=0V, dI/dt=100A/µs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Ordering Information Device MTP3401N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 3401 MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 3/8 MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 4/8 MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) 1.6 Power Dissipation---PD(W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature --- Ta(℃ ) 200 Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 5/8 Fig. 12 Power Derating Curve MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 6/8 Carrier Tape Dimension MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 7/8 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Note : All temperatures refer to topside of the package, measured on the package body surface. Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. MTP3401N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension A L 3 B 1 2 S Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 8/8 Marking: TE 3401 V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP3401N3 CYStek Product Specification