MTP9435BDYQ8

厂商：
CYSTEKEC(全宇昕)
封装：
描述：
MTP9435BDYQ8 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Cystech Electonics Corp.

数据手册：

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MTP9435BDYQ8 数据手册

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 MTP9435BDYQ8 Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=36mΩ@VGS=-10V, ID=-5.3A RDS(ON)=55mΩ@VGS=-4.5V, ID=-4.2A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free package Equivalent Circuit MTP9435BDYQ8 Outline SOP-8 G：Gate S：Source D：Drain MTP9435BDYQ8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Note : 1.Surface mounted on FR-4 board, t≤10sec. 2.Pulse width ≤300μs, Duty Cycle≤2% Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 2/6 Symbol BVDSS VGS ID IDM Pd Tj Tstg Rth,j-a Limits -30 ±20 -5.3 -24 2.5 0.02 -55~+150 -55~+150 50 Unit V V A A W W / °C °C °C °C/W Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 V VGS=0, ID=-250μA VGS(th) -1 -2.5 V VDS=VGS, ID=-250μA IGSS ±100 nA VGS=±20V, VDS=0 IDSS -1 μA VDS=-30V, VGS=0 36 ID=-5.3A, VGS=-10V *RDS(ON) mΩ 55 ID=-4.2A, VGS=-4.5V *GFS 5 S VDS=-5V, ID=-5.3A Dynamic Ciss 582 pF VDS=-15V, VGS=0, f=1MHz Coss 125 Crss 86 *td(ON) 9 VDD=-15V, ID=-1A, *tr 10 ns VGS=-10V, RG=6Ω, RD=15Ω *td(OFF) 37 *tf 23 *Qg 11.7 nC VDS=-15V, VGS=-10V, ID=-5.3A *Qgs 2.1 *Qgd 2.9 Source Drain Diode *VSD -0.84 -1.2 V VGS=0V, IS=-1.7A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP9435BDYQ8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 3/6 MTP9435BDYQ8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 4/6 MTP9435BDYQ8 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 5/6 MTP9435BDYQ8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 6/6 Marking: I B C H Device Name Date Code 9435BDYSC □□□□ J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP9435BDYQ8 CYStek Product Specification

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MTP9435BDYQ8

物料型号： - 型号：MTP9435BDYQ8

器件简介： - MTP9435BDYQ8是一款P沟道增强型MOSFET，提供快速开关、坚固的器件设计、低导通电阻和成本效益的最佳组合。SOP-8封装适用于所有商业-工业表面贴装应用，并适用于如DC/DC转换器等低电压应用。

引脚分配： - G: Gate（栅极） - S: Source（源极） - D: Drain（漏极）

参数特性： - 绝对最大额定值： - 漏源击穿电压（BVDS）：-30V - 栅源电压（VGs）：±20V - 连续漏电流（ID）：-5.3A - 脉冲漏电流（IDM）：-24A - 总功率耗散（Pd）：2.5W - 线性降额因子：0.02W/°C - 工作结温（Tj）：-55~+150°C - 存储温度（Tstg）：-55~+150°C - 热阻，结到环境（Rth,j-a）：50°C/W - 电气特性（Tj=25°C）： - 漏源电压（BVDSs）：-30V - 栅源阈值电压（VGS(th)）：-2.5V - 栅源电流（IGsS）：±100μA - 漏源饱和电流（IDss）：-1μA - 导通电阻（RDS(ON)）：36mΩ（ID=-5.3A, VGS=-10V）和55mΩ（ID=-4.2A, VGS=-4.5V） - 栅漏电荷（Qg）：11.7nC

功能详解： - 该器件具有简单的驱动要求、低导通电阻、快速开关速度和无铅封装。

应用信息： - 适用于DC/DC转换器等低电压应用。

封装信息： - SOP-8封装，这是一种通用的商业-工业表面贴装应用封装。

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